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參數(shù)資料
| 型號： | FP2189-RFID |
| 英文描述： | 1 - Watt HFET |
| 中文描述： | 1 -瓦特異質結場效應晶體管 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 644K |
| 代理商： | FP2189-RFID |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
September 2004
FP2189
1 - Watt HFET
Product Information
Application Circuit: 870 – 960 MHz (FP2189-PCB900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I
ds
= 250 mA, 25
°
C
Frequency
MHz
S21 – Gain
dB
S11 – Input Return Loss
dB
S22 – Output Return Loss
dB
Output P1dB
dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing)
Noise Figure
dB
IS-95 Channel Power
@ -45 dBc ACPR
870
18.9
-24
-7.6
+30.0
915
18.7
-21
-8.3
+30.2
960
18.4
-12
-9.6
+30.0
dBm
+42.8
4.2
4.5
4.5
dBm
+24.5
IRES
R=
10 Ohm
R2
CAP
ID=
C=
DNP pF
C14
IIND
L=
18 nH
L1
RES
ID=
R=
100 Ohm
R1
ICAP
C=
100 pF
C1
ICAP
C=
DNP pF
C2
IND
ID=
L=
82 nH
L3
CAP
ID=
C=
DNP pF
C6
CAP
ID=
C=
100 pF
C7
CAP
ID=
C=
1000 pF
ICAP
C=
DNP pF
C12
CAP
C=
100 pF
C9
ICAP
C=
4.7 pF
C15
ICAP
C=
DNP pF
C13
IND
L=
5.6 nH
L2
CAP
ID=
C=
1e5 pF
C11
ICAP
C=
DNP pF
C10
ICAP
C=
100 pF
C3
ICAP
C=
1000 pF
C4
IIND
L=
5.6 nH
L4
CAP
ID=
C=
2.4 pF
C5
1
2
SID=
NET=
"FP2189"
Q1
P1
P=
50 Ohm
Z=
P2
P=
50 Ohm
Z=
-Vgg
Vds=8V @ 250 mA
14 mil GETEK
TM
ML200DSS (er = 4.2)
The main microstrip line has a line impedance of 50 O.
Bill of Materials
Value
100 pF
1000 pF
2.4 pF
0.1
μ
F
18 nH
5.6 nH
82 nH
100 O
10 O
FP2189
Ref. Desig.
C1, C3, C7, C9, C13
C4, C8
C5
C11
L1
L2, L4
L3
R1
R2
Q1
C2, C6, C10, C12, C14
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 1W HFET
Do Not Place
Size
0603
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
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