參數(shù)資料
型號(hào): FP25R12KS4CV2
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 1/11頁
文件大?。?/td> 99K
代理商: FP25R12KS4CV2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP25R12KE3
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
T
vj
= 25°C
V
RRM
1600
V
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
T
C
= 80°C
I
RMSmax
60
A
Durchlastrom Grenzeffektivwert proChip
Forward current RMS maximum per Chip
T
C
= 80°C
I
FRMSM
50
A
Stostrom Grenzwert
surge forward current
Grenzlastintegral
I
2
t - value
t
P
= 10 ms, T
vj
= 25°C
t
P
= 10 ms, T
vj
= 150°C
t
P
= 10 ms, T
vj
= 25°C
t
P
= 10 ms, T
vj
= 150°C
I
FSM
315
260
500
340
A
A
I
2
t
A
2
s
A
2
s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
vj
= 25°C
V
CES
1200
V
Kollektor-Dauergleichstrom
DC-collector current
Tc = 80 °C
T
C
= 25 °C
I
C,nom.
I
C
25
40
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80 °C
I
CRM
50
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25°C
P
tot
150
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
I
F
25
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
50
A
Grenzlastintegral
I
2
t - value
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
2
t
170
A
2
s
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
vj
= 25°C
V
CES
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80 °C
T
C
= 25 °C
I
C,nom.
I
C
15
25
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80°C
I
CRM
30
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25°C
P
tot
100
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
I
F
10
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
20
A
prepared by: Andreas Schulz
date of publication:23.04.2002
approved by: Robert Severin
revision: 2
1(11)
DB-PIM-IGBT3_2Serie.xls
相關(guān)PDF資料
PDF描述
FP30D250E Industrial Control IC
FP30L100E Industrial Control IC
FP3W90HVX2 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247AC
FP4050 2-WATT POWER PHEMT
FPD03784
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FP25R12KT3 功能描述:IGBT 模塊 N-CH 1.2KV 40A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FP25R12KT4 功能描述:IGBT 模塊 IGBT 1200V 25A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FP25R12KT4_B15 功能描述:IGBT 模塊 IGBT Module 25A 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FP25R12KT4B15BOSA1 制造商:Infineon Technologies AG 功能描述:
FP25R12U1T4 制造商:Infineon Technologies AG 功能描述:SP000663674_LOW POWER SMART_TY_RO 制造商:Infineon Technologies AG 功能描述:IGBT LOW POW NTC 1200V 25A PIM 制造商:Infineon Technologies AG 功能描述:IGBT, LOW POW NTC, 1200V, 25A, PIM