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參數(shù)資料
| 型號： | FP1189-RFID |
| 英文描述： | 1/2 - Watt HFET |
| 中文描述： | 1 / 2 -瓦特異質(zhì)結(jié)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 516K |
| 代理商： | FP1189-RFID |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
September 2004
FP1189
- Watt HFET
Product Information
Application Circuit: 2110 – 2170 MHz (FP1189-PCB2140S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I
ds
= 125 mA, 25
°
C
Frequency
MHz
S21 – Gain
dB
S11 – Input Return Loss
dB
S22 – Output Return Loss
dB
Output P1dB
dBm
Output IP3
(+12 dBm / tone, 1 MHz spacing)
Noise Figure
dB
W-CDMA Channel Power
@ -45 dBc ACPR
2110
14.7
-24
-7.6
+27.1
2140
14.7
-24
-9.0
+27.2
2170
14.7
-24
-9.8
+26.8
dBm
+39.7
4.2
4.3
4.2
dBm
+18.4
RES
R=
10 Ohm
R2
IND
L=
18 nH
L1
IRES
R =
100 Ohm
R1
ICAP
C=
22 pF
C1
CAP
ID=
C=
DNP pF
C2
IND
L=
18 nH
L2
CAP
ID=
C=
DNP pF
C6
ICAP
C=
22 pF
C7
CAP
ID=
C=
1e5 pF
C8
ICAP
C=
22 pF
C9
IND
ID=
L=
2.7 nH
L3
ICAP
C=
33 pF
C3
ICAP
C=
0.5 pF
C5
ICAP
C=
DNP pF
C4
CAP
C=
DNP pF
C11
CAP
ID=
C=
1.5 pF
C10
1
2
SID=
NET=
"FP1189"
Q1
PORT
P=
50 Ohm
Z=
1
PORT
50 Ohm
Z=
2
-Vgg
Vds = 8 V @ 125 mA
14 mil GETEK
TM
ML200DSS (e
r
= 4.2)
The main microstrip line has a line impedance of 50 O.
Bill of Materials
Value
Part style
22 pF
Chip capacitor
33 pF
Chip capacitor
0.5 pF
0.1
μ
F
1.5 pF
Chip capacitor
18 nH
Multilayer chip inductor
2.7 nH
Multilayer chip resistor
100 O
Chip resistor
10 O
Chip resistor
FP1189
WJ 0.5W HFET
Do Not Place
Ref. Desig.
C1, C7, C9
C3
C5
C8
C10
L1, L2
L3
R1
R2
Q1
C2, C4, C6, C11
Size
0603
0805
0603
1206
0603
0603
0603
0603
0603
SOT-89
Chip capacitor
Chip capacitor
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