參數(shù)資料
型號(hào)： FP1189-RFID
英文描述： 1/2 - Watt HFET
中文描述： 1 / 2 -瓦特異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管
文件頁數(shù)： 1/12頁
文件大?。?/td> 516K
代理商： FP1189-RFID
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
September 2004
FP1189
- Watt HFET
Product Information
Product Features
50 – 4000 MHz
+27 dBm P1dB
+40 dBm Output IP3
High Drain Efficiency
20.5 dB Gain @ 900 MHz
Lead-free/Green/
RoHS-
compliant
SOT-89 Package
MTTF >100 Years
Applications
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Specifications
Product Description
The FP1189 is a high performance -Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 125 mA to achieve +40 dBm output IP3
performance and an output power of +27 dBm at 1dB
compression, while providing 20.5 dB gain at 900 MHz.
The device conforms to WJ Communications’ long history
of producing high reliability and quality components. The
FP1189 has an associated MTTF of greater than 100 years
at a mounting temperature of 85
°
C and is available in both
the standard SOT-89 package and the environmentally-
friendly lead-free/green/RoHS-compliant and green SOT-
89 package. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
Function
Input / Gate
Output / Drain
Ground
Pin No.
1
3
2, 4
DC Parameter
Saturated Drain Current, I
dss
(1)
Transconductance, G
m
Pinch Off Voltage, V
p
(2)
Units
mA
mS
V
Min
220
Typ Max
290
155
-2.1
360
RF Parameter
(3)
Operational Bandwidth
Test Frequency
Small Signal Gain
SS Gain (50
, unmatched)
Maximum Stable Gain
Output P1dB
Output IP3
(4)
Noise Figure
Drain Bias
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
Typ Max
50 - 4000
800
20.5
24
+27.4
+40
2.7
+8 V @ 125 mA
17
21
1. I
is measured with V
= 0 V, V
= 3 V.
2. Pinch-off voltage is measured when I
ds
= 1.2 mA.
3. Test conditions unless otherwise noted: T = 25oC, V
DS
= 8 V, I
DQ
= 125 mA, in a tuned application
circuit with Z
= Z
LOPT
, Z
= Z
(optimized for output power).
4. 3OIP measured with
tones at an output power of +12 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V
dg
Junction Temperature
Rating
-40 to +85
°
C
-55 to +150
°
C
2.0 W
6 dB above Input P1dB
+14 V
+220
°
C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(5)
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(4)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
W-CDMA Ch. Power
@ -45 dBc ACLR
Drain Voltage
Drain Current
5. Typical parameters represent performance in a tuned application circuit.
Units
MHz
dB
dB
dB
dBm
dBm
dB
Typical
1960
15.7
26
9.6
915
20.6
13
6.0
+27.4 +27.2 +27.2 +28.1
+39.9 +40.4 +39.7 +40.0
2.7
3.7
2140
14.7
24
9.0
2450
13.2
36
7.6
4.3
dBm
+21
+20.8
+18.4
+8
125
V
mA
Ordering Information
Part No.
FP1189
Description
-Watt HFET
(leaded SOT-89 Pkg)
-Watt HFET
(lead-free/green/RoHS-compliant SOT-89 Pkg)
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
FP1189-G
FP1189-PCB900S
FP1189-PCB1900S
FP1189-PCB2140S
RF IN
GND
RF OUT
GND
4
1
2
3
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