參數(shù)資料
型號(hào): FLL1200IU-2
廠商: FUJITSU LTD
元件分類: 功率晶體管
英文描述: L-Band Medium & High Power GaAs FET
中文描述: L BAND, GaAs, N-CHANNEL, RF POWER, JFET
封裝: CASE IU, 6 PIN
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 92K
代理商: FLL1200IU-2
3
FLL1200IU-2
L-Band Medium & High Power GaAs FET
S-PARAMETERS
VDS= 12V, IDS= 2.5A
FREQUENCY
(MHZ)
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
.927
.926
.922
.909
.893
.864
.821
.765
.717
.722
.786
.857
.904
.929
.943
.946
.938
.933
.918
.903
.881
170.0
168.8
167.2
165.5
163.7
161.7
160.4
160.1
163.3
168.6
170.8
168.7
164.3
158.9
153.3
148.4
140.8
131.3
119.4
104.1
83.0
.410
.432
.470
.526
.614
.738
.895
1.084
1.268
1.353
1.320
1.174
1.006
.871
.751
.690
.653
.647
.634
.634
.558
47.9
42.6
35.7
28.6
19.7
7.5
-8.4
-28.3
-54.0
-81.1
-108.9
-134.3
-156.4
-174.7
169.0
158.3
144.8
130.6
113.5
97.3
79.7
.005
.006
.006
.007
.009
.010
.011
.012
.012
.011
.009
.008
.009
.010
.013
.015
.018
.021
.025
.030
.037
39.5
38.5
37.8
32.2
24.7
15.1
1.8
-18.0
-46.9
-82.5
-126.8
-175.5
144.7
114.2
94.5
78.5
67.6
54.6
47.4
31.7
18.8
.929
.920
.917
.911
.907
.905
.914
.928
.940
.932
.886
.821
.766
.728
.700
.683
.662
.644
.620
.591
.553
170.6
169.8
168.7
167.8
166.9
166.0
164.8
163.5
160.2
155.8
151.6
148.8
147.6
147.3
146.9
145.8
144.2
141.4
136.9
131.2
123.4
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
VDS = 12V
IDS = 5.0A
f = 1.96GHz
f = 1.0MHz
2-tone test
OUTPUT POWER vs. IMD
32
34
36
38
40
42
44
46
48
-44
-40
-56
-60
-52
-48
-36
-32
-28
-24
Total Output Power (dBm)
I
IM3
IM5
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