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參數(shù)資料
| 型號： | FLG Series |
| 英文描述： | Flash Memory Card 256Kilobyte Through 5 Megabyte (Intel based)(256K字節(jié)-5M字節(jié)閃速存儲器卡（基于Intel）) |
| 中文描述： | 閃存卡256Kilobyte通過5兆字節(jié)（基于Intel）（256K字節(jié)，500萬字節(jié)閃速存儲器卡（基于英特爾）） |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 125K |
| 代理商： | FLG SERIES |
August 2000 Rev. 3 - ECO #13132
5
PCMCIA Flash Memory Card
FLG Series
PC Card Products
Absolute Maximum Ratings
(1)
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS
0°C to +60 °C
-40°C to +85 °C
-30°C to +80 °C
-40°C to +85 °C
-0.5V to VCC+0.5V
-0.5V to +7.0V
Note:
(1) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
Symbol Parameter
Density
Notes
Typ
(3)
10
Max
Units Test Conditions
I
CCR
VCC Read Current
All
30
mA
VCC = VCCmax
tcycle = 150ns,CMOS levels
Programming in Progress
I
CCW
VCC Program Current
All
1.0
10
mA
I
PPW
VPP Program Current
All
Vpp = 12V
8.0
30
mA
Vpp=VppH Programming
in Progress
Erasure in Progress
I
CCE
VCC Erase Current
All
5.0
15
mA
I
PPE
VPP Erase Current
All
Vpp = 12V
10
30
mA
Vpp=VppH Erasure in
Progress
VCC = VCCmax
Control Signals = VCC
CMOS levels
256KB
512KB
1MB
2MB
3MB
4MB
5MB
100
I
CCS
(CMOS)
VCC Standby Current
μA
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Byte wide operations.
For 16 bit operation values are double.
2. Control Signals: CE
1
#, CE
2
#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25oC.
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics
(1)
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
I
LI
Input Leakage Current
1
±1.0
μA
VCC = VCCMAX
Vin =VCC or VSS
VCC = VCCMAX
Vout =VCC or VSS
I
LO
Output Leakage Current
1
±10
μA
V
IL
Input Low Voltage
1
0
0.8
V
V
IH
Input High Voltage
1
0.7VCC
VCC+0.5
V
V
OL
Output Low Voltage
1
0.4
V
IOL = 3.2mA
V
OH
Output High Voltage
1
VCC-0.4
VCC
V
IOH = -2.0mA
V
LKO
VCC Erase/Program
Lock Voltage
1
2.5
V
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 μA when VIN = GND due to
internal pull-up resistors.
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