參數(shù)資料
型號(hào)： FJPF5321
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： NPN Triple Diffused Planar Silicon Transistor
中文描述： 5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 70K
代理商： FJPF5321
2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
F
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
*Collector Current (Pulse)
I
B
Base Current (DC)
I
BP
*Base Current (Pulse)
P
C
Power Dissipation(T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
* Pulse Test: Pulse Width = 5ms, Duty Cycle
≤
10%
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
f
T
Current Gain bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
t
ON
Turn On Time
t
STG
Storage Time
t
F
Fall Time
t
ON
Turn On Time
t
STG
Storage Time
t
F
Fall Time
Value
800
500
7
5
10
2
4
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
°
C
°
C
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
C
=1mA, I
C
= 0
V
CB
= 800V, I
E
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CE
= 10V, I
C
= 0.6A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
EB
= 7V, I
C
= 0, f = 1MHz
V
CC
= 125V, I
C
= 1A
I
B1
= -I
B2
= 0.2A
R
L
= 125
Min.
800
500
7
-
-
15
8
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
14
65
1400
-
-
-
-
-
-
Max.
-
-
-
100
10
40
-
1.0
1.5
-
100
2000
0.5
6.5
0.3
0.5
3.0
0.3
Units
V
V
V
μ
A
μ
A
DC Current Gain
V
V
MHz
pF
pF
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
-
-
-
-
V
CC
= 250V, I
C
= 4A
I
B1
= 0.8A, I
B2
= -1.6A
R
L
= 62.5
FJPF5321
High Voltage and High Reliability
High speed Switching
Wide Safe Operating Area
1
1.Base 2.Collector 3.Emitter
TO-220F
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