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參數(shù)資料
| 型號(hào)： | FJP3307D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Fast Switching NPN Power Transistor |
| 中文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | LEAD FREE, TO-220, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 155K |
| 代理商： | FJP3307D |
2004 Fairchild Semiconductor Corporation
FJP3307D Rev. 1.0.0
1
www.fairchildsemi.com
F
FJP3307D
High Voltage Fast Switching NPN Power Transistor
Features
Built-in Diode between Collector and Emitter
Suitable for Electronic Ballast and Switch Mode Power Supplies
Absolute Maximum Ratings
* Pulse Test: PW = 300
μ
s, Duty Cycle = 2% Pulsed
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
700
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
9
V
Collector Current (DC)
8
A
* Collector Current (Pulse)
16
A
Base Current (DC)
4
A
Collector Dissipation (T
C
= 25
°
C)
Junction Temperature
80
W
150
°
C
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
BV
CBO
BV
CEO
BV
EBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
Collector-Base Breakdown Voltage
I
C
= 500
μ
A, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500
μ
A, I
C
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 2A
V
CE
= 5V, I
C
= 5A
I
C
= 2A, I
B
= 0.4A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 2A
I
C
= 2A, I
B
= 0.4A
I
C
= 5A, I
B
= 1A
700
V
Collector-Emitter Breakdown Voltage
400
V
Emitter-Base Breakdown Voltage
9
V
Emitter Cut-off Current
1
mA
DC Current Gain
8
5
40
30
Collector-Emitter Saturation Voltage
1
V
2
V
3
V
V
BE(sat)
Base-Emitter Saturation Voltage
1.2
V
1.6
V
TO-220
1.Base 2.Collector 3.Emitter
1
Internal Schematic Diagram
B
E
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FJP3307D_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Fast Switching NPN Power Transistor |
| FJP3307DH1 | 功能描述:兩極晶體管 - BJT HI-VLTG FAST SWITCH NPN POWER TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJP3307DH1TU | 功能描述:兩極晶體管 - BJT HI-VLTG FAST SWITCH NPN POWER TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJP3307DH2 | 功能描述:兩極晶體管 - BJT HI-VLTG FAST SWITCH NPN POWER TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJP3307DH2TU | 功能描述:兩極晶體管 - BJT HI-VLTG FAST SWITCH NPN POWER TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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