參數(shù)資料
型號(hào): FJL6820
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: NPN Triple Diffused Planar Silicon Transistor
中文描述: 20 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-264
封裝: TO-264, 3 PIN
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 106K
代理商: FJL6820
2001 Fairchild Semiconductor Corporation
Rev. A1, May 2001
F
Typical Characteristics
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
Figure 6. Resistive Load Switching Time
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
I
B
=2.0A
I
B
=1.8A
I
B
=1.6A
I
B
=1.4A
I
B
=1.2A
I
B
=1.0A
I
B
=0.8A
I
B
=0.6A
I
B
=0.4A
I
B
=0.2A
I
C
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
100
1
10
100
Ta = - 25
0
C
Ta = 25
0
C
Ta = 125
0
C
V
CE
= 5V
h
F
,
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
0.01
0.1
1
10
I
C
= 3 I
B
Ta = 25
Ta = - 25
0
C
0
C
Ta = 125
0
C
V
C
(
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
0.01
0.1
1
10
I
C
= 5 I
B
Ta = - 25
0
C
Ta = 25
0
C
Ta = 125
0
C
V
C
(
I
C
[A], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
- 25
0
C
25
0
C
125
0
C
V
CE
= 5V
I
C
[
V
BE
[V], BASE-EMITTER VOLTAGE
0.1
1
10
100
0.01
0.1
1
10
I
B1
= 2A, V
CC
= 200V
I
C
= 10A
t
STG
t
F
t
S
F
μ
s
I
B2
[A], REVERSE BASE CURRENT
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