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參數(shù)資料
| 型號： | FJN13003 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon Transistor Planar Silicon Transistor |
| 中文描述： | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 49K |
| 代理商： | FJN13003 |
2001 Fairchild Semiconductor Corporation
Rev. A, July 2001
F
NPN Silicon Transistor Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
*Collector Current (Pulse)
I
B
Base Current (DC)
I
BP
*Base Current (Pulse)
P
C
Collector Power Dissipation(T
a
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics
T
a
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
Parameter
Value
700
400
9
1.5
3
0.75
1.5
1.1
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°
C
°
C
Test Condition
I
C
=500
μ
A, I
E
=0
I
C
=5mA, I
B
=0
I
E
=500
μ
A, I
C
=0
V
EB
=9V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=1.0A
I
C
=0.5A, I
B
=0.1A
I
C
=1.0A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
I
C
=0.5A, I
B
=0.1A
I
C
=1.0A, I
B
=0.25A
V
CE
=10V, I
C
=0.1A
V
CC
=125V, I
C
=1A,
I
B1
=0.2A, I
B2
=-0.2A,
R
L
= 125
Min.
700
400
9
Typ.
Max.
Units
V
V
V
μ
A
10
21
9
5
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.5
1.0
3.0
1.0
1.2
V
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
f
T
t
ON
t
STG
t
F
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
4
MHz
μ
s
μ
s
μ
s
1.1
4.0
0.7
FJN13003
High Voltage Switch Mode Application
High Speed Switching
Suitable for Electronic Ballast up to 21W
1. Emitter 2. Collector 3.Base
TO-92
1
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