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參數(shù)資料
| 型號(hào)： | FJE5304D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage High Speed Power Switch Application |
| 中文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | LEAD FREE, TO-126, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 89K |
| 代理商： | FJE5304D |
2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
F
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
* Collector Current (Pulse)
I
B
Base Current (DC)
I
BP
* Base Current (Pulse)
P
C
Collector Dissipation (T
C
=25
°
C)
T
STG
Storage Temperature
* Pulse Test Pulse Width = 5ms, Duty Cycle
≥
1.0%
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CES
Collector Cut-off Current
I
CEO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
Parameter
Value
700
400
12
4
8
2
4
30
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°
C
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CE
= 700V, V
EB
= 0
V
CE
= 400V, IB = 0
V
EB
= 12V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 2A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.5A
I
F
= 2A
Min.
700
400
12
Typ.
Max.
Units
V
V
V
mA
mA
mA
100
250
100
10
8
40
0.7
1.0
1.5
1.1
1.2
1.3
2.5
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
V
BE
(sat)
Base-Emitter Saturation Voltage
V
V
f
Internal Diode Forward Voltage Drop
V
FJE5304D
High Voltage High Speed Power Switch
Application
Wide Safe Operating Area
Built-in Free Wheeling diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
1.Emitter 2.Collector 3.Base
1
TO-126
C
B
E
Equivalent Circuit
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