參數(shù)資料
型號: FGAF40N60UFD
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Ultrafast IGBT
中文描述: 40 A, 600 V, N-CHANNEL IGBT
封裝: LEAD FREE, TO-3PF, 3 PIN
文件頁數(shù): 4/8頁
文件大小: 583K
代理商: FGAF40N60UFD
FGAF40N60UFD Rev. A
F
2004 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
0
500
1000
1500
2000
2500
3000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
30
Cres
Coes
Cies
C
Collector-Emitter Voltage, V
CE
(V)
1
10
100
100
1000
20
200
Tf
Common Emitter
Vcc=300V,V
GE
=
±
15V
Ic=20A
Tc = 25
Tc = 125
Toff
Tf
S
Gate Resistance, R
G
(
)
1
10
100
100
1000
2000
50
200
Eon
Eoff
Common Emitter
Vcc=300V,V
GE
=
±
15V
Ic=20A
Tc = 25
Tc = 125
S
Gate Resistance, R
G
(
)
10
15
20
25
30
35
40
10
100
200
Tr
Ton
Collector Current, Ic (A)
S
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 10
T
C
= 25
T
C
= 125
10
15
20
25
30
35
40
100
1000
20
Tf
Toff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 10
T
C
= 25
T
C
= 125
Collector Current, I
C
[A]
S
Toff
Tf
1
10
100
10
100
200
300
Ton
Tr
Common Emitter
Vcc=300V,V
GE
=
±
15V
Ic=20A
Tc = 25
Tc = 125
- - - -
S
Gate Resistance, R
G
(
)
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