參數(shù)資料
型號(hào)： FGD3N60LSDTF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： IGBT
中文描述： 6 A, 600 V, N-CHANNEL IGBT
封裝： D-PAK, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 848K
代理商： FGD3N60LSDTF
2005 Fairchild Semiconductor Corporation
FGD3N60LSD Rev. A
1
www.fairchildsemi.com
F
July 2005
FGD3N60LSD
IGBT
Features
High Current Capability
Very Low Saturation Voltage : V
CE(sat)
= 1.2 V @ I
C
= 3A
High Input Impedance
Applications
HID Lamp Applications
Piezo Fuel Injection Applications
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide
very low conduction losses. The device is designed for applica-
tions where very low On-Voltage Drop is a required feature.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
D-PAK
G
E
C
G
C
E
Symbol
Description
FGD3N60LSD
Units
V
CES
V
GES
I
C
Collector-Emitter Voltage
600
V
Gate-Emitter Voltage
±
20
V
Collector Current
@ T
C
= 25
°
C
@ T
C
= 100
°
C
6
A
Collector Current
3
A
I
CM (1)
I
F
Pulsed Collector Current
25
A
Diode Continous Forward Current @ T
C
= 100
°
C
Diode Maximum Forward Current
3
A
I
FM
25
A
P
D
Maximum Power Dissipation
@ T
C
= 25
°
C
40
W
Derating Factor
0.32
W/
°
C
°
C
°
C
°
C
T
J
T
stg
T
L
Operating Junction Temperature
-55 to +150
Storage Temperature Range
-55 to +150
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
250
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
(IGBT)
R
θ
JA
Thermal Resistance, Junction-to-Case
--
3.1
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
--
100
相關(guān)PDF資料
PDF描述
FGD3N60LSDTM IGBT
FGH20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGP20N6S2D Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
FGB20N6S2DT 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGD3N60LSDTM 功能描述:IGBT 晶體管 600V IGBT HID Application RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGD3N60UNDF 功能描述:IGBT 晶體管 600V, 3A Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGD4536 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:360V, PDP IGBT
FGD4536TM 功能描述:IGBT 晶體管 360V PDP IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGD4536TM_F065 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 360V 125W DPAK
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