參數(shù)資料
型號(hào): FGA50N60LS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): IGBT 晶體管
英文描述: IGBT
中文描述: 100 A, 600 V, N-CHANNEL IGBT
封裝: TO-3P, 3 PIN
文件頁(yè)數(shù): 5/7頁(yè)
文件大小: 493K
代理商: FGA50N60LS
FGA50N60LS Rev. A
F
2003 Fairchild Semiconductor Corporation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
10
0.1
0.5
0.2
0.05
0.02
0.01
single pulse
T
Rectangular Pulse Duration [sec]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
Fig 17. Transient Thermal Impedance of IGBT
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
20
40
60
80
100
100
1000
10000
10
Common Emitter
V
GE
= +15V, R
G
= 5.9
T
C
= 25
T
C
= 125
o
C
o
C
Eon
Eoff
Eon
Eoff
S
Collector Current, I
C
[A]
0
30
60
Gate Charge, Qg (nC)
90
120
150
180
0
3
6
9
12
15
200V
300V
Vcc=100V
Common Emitter
R
L
= 6
Tc=25
o
C
G
G
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 20V, T
C
= 100
o
C
Collector - Emitter Voltage, V
CE
[V]
C
C
0.1
1
10
100
1000
0.1
1
10
100
Single Nonrepetitive
Pulse T
= 25
Curves must be derated
linearly with increase
in temperature
o
C
50
μ
s
100
μ
s
1ms
DC Operation
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
C
C
Collector - Emitter Voltage, V
CE
[V]
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