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參數(shù)資料
| 型號： | FG1000BV-90DA |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | HIGH POWER INVERTER USE PRESS PACK TYPE |
| 中文描述： | 大功率逆變器使用的新聞包裝型 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 72K |
| 代理商： | FG1000BV-90DA |
Aug.1998
25
20
15
10
5
0
1000
200
400
600
800
t
gq
t
s
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/
μ
s
V
RG
= 17V
C
S
= 0.7
μ
F
L
S
= 0.3
μ
H
T
j
= 125°C
50
40
30
20
10
0
30
10
20
40
50
t
gq
t
s
V
D
= 2250V
V
DM
= 3375V
I
T
= 1000A
V
RG
= 17V
C
S
= 0.7
μ
F
L
S
= 0.3
μ
H
T
j
= 125°C
500
400
300
200
100
0
1000
200
400
600
800
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/
μ
s
V
RG
= 17V
C
S
= 0.7
μ
F
L
S
= 0.3
μ
H
T
j
= 125°C
500
400
300
200
100
0
30
10
20
40
50
V
D
= 2250V
V
DM
= 3375V
I
T
= 1000A
V
RG
= 17V
C
S
= 0.7
μ
F
L
S
= 0.3
μ
H
T
j
= 125°C
3.0
2.5
2.0
1.5
1.0
0.5
1000
200
400
600
800
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/
μ
s
V
RG
= 17V
C
S
= 0.7
μ
F
L
S
= 0.3
μ
H
T
j
= 125°C
1.6
1.2
0
200
1200
400
600
800
1000
0.4
0.8
1.4
1.0
0.2
0.6
V
D
= 2250V
I
GM
= 25A
d
iG
/d
t
= 10A/
μ
s
C
S
= 0.7
μ
F
R
S
= 5
T
j
= 125°C
d
iT
/d
t
= 300A/
μ
s
200A/
μ
s
100A/
μ
s
T
g
,
s
μ
s
RATE OF RISE OF TURN OFF GATE CURRENT (A/
μ
S)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
T
g
,
s
μ
s
TURN OFF CURRENT (A)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
T
RATE OF RISE OF TURN OFF GATE CURRENT (A/
μ
S)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
T
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
S
TURN ON CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
S
TURN OFF CURRENT (A)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
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