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參數(shù)資料
| 型號(hào)： | FG2000JV-90DA |
| 廠(chǎng)商： | Powerex Power Semiconductors |
| 英文描述： | Card Edge Connector; Number of Contacts:164; Pitch Spacing:1mm; Tail Length:2.30mm; Contact Termination:Solder; Connector Mounting:PC Board; Contact Material:Phosphor Bronze; Contact Plating:Tin; Leaded Process Compatible:Yes |
| 中文描述： | 大功率逆變器使用的新聞包裝型 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 41K |
| 代理商： | FG2000JV-90DA |
Feb.1999
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING
Dimension in mm
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000JV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
FG2000JV-90DA
A
A
A
kA
A
2
s
A/
μ
s
V
V
A
A
W
kW
W
W
°
C
°
C
kN
g
I
TQRM
I
T(RMS)
I
T(AV)
I
TSM
I
2t
d
iT
/d
t
V
FGM
V
RGM
I
FGM
I
RGM
P
FGM
P
RGM
P
FG(AV)
P
RG(AV)
T
j
T
stg
—
—
2000
940
600
13
7
×
10
5
500
10
17
50
700
250
23.8
50
150
–40 ~ +125
–40 ~ +150
18 ~ 24
760
V
RRM
V
RSM
V
R(DC)
V
DRM
V
DSM
V
D(DC)
+
: V
GK
= –2V
V
V
V
V
V
V
90DA
17
17
17
4500
4500
3600
AUXILIARY CATHODE
CONNECTOR (RED)
356 ± 8
GATE (WHITE)
φ
3.5 ± 0.2 DEPTH 2.2 ± 0.2
CATHODE
0
0
TYPE NAME
ANODE
φ
63 ± 0.5
φ
63 ± 0.5
φ
93 max
2
φ
3.5 ± 0.2 DEPTH 2.2 ± 0.2
I
TQRM
Repetitive controllable on-state current .............
2000A
I
T(AV)
Average on-state current...................... 600A
V
DRM
Repetitive peak off state voltage ........ 4500V
Anode short type
MAXIMUM RATINGS
Voltage class
Symbol
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
+
Non-repetitive peak off-state voltage
+
DC off-state voltage
+
Parameter
Unit
Unit
Ratings
Symbol
Parameter
Conditions
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
V
D
= 2250V, V
DM
= 3375V, T
j
= 125
°
C, C
S
= 4.0
μ
F, L
S
= 0.3
μ
H
f = 60Hz, sine wave
θ
= 180
°
, T
f
= 91
°
C
One half cycle at 60Hz
One cycle at 60Hz
V
D
= 2250V, I
GM
= 30A, T
j
= 125
°
C
Recommended value 20
Standard value
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