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參數(shù)資料
| 型號： | FDD6670S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 20 AMP MINIATURE POWER RELAY |
| 中文描述： | 64 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 97K |
| 代理商： | FDD6670S |
September 2001
FDD6670S
30V N
-
Channel PowerTrench
ò
SyncFET
2001 Fairchild Semiconductor Corporation
FDD6670S Rev E(W)
General Description
The FDD6670S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDD6670S includes
an
integrated
Schottky
monolithic SyncFET technology. The performance of
the FDD6670S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6670A in parallel with a Schottky diode.
diode
using
Fairchild’s
Applications
DC/DC converter
Motor Drives
Features
64 A, 30 V
R
DS(ON)
= 9 m
@ V
GS
= 10 V
R
DS(ON)
= 12.5 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (17nC typical)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
.
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation
Ratings
30
±
20
64
100
70
3.2
Units
V
V
(Note 3)
A
W
(Note 1a)
(Note 1)
(Note 1a)
P
D
(Note 1b)
1.3
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
1.8
40
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6670S
FDD6670S
13’’
16mm
2500 units
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD6670 | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6670AL | 30V N-Channel PowerTrench MOSFET |
| FDD6670A | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6670AS | 30V N-Channel PowerTrench SyncFET |
| FDD6670AS_NL | 30V N-Channel PowerTrench SyncFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD6670S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD6672A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6672A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD6672A_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
| FDD6676 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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