參數(shù)資料
型號(hào)： FDD6670
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel, Logic Level, PowerTrench MOSFET
中文描述： N溝道，邏輯層次，的PowerTrench MOSFET的
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 195K
代理商： FDD6670
F
FDD6670A, Rev. C
FDD6670A
N-Channel, Logic Level, PowerTrench
MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
DC/DC converter
Motor drives
February 2000
Features
66 A, 30 V. R
DS(on)
= 0.008
@ V
GS
= 10 V
R
DS(on)
= 0.010
@ V
GS
= 4.5 V.
Low gate charge (35nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(on)
.
2000 Fairchild Semiconductor Corporation
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings
T
C
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
30
±
20
66
15
100
70
3.2
1.3
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
T
A
= 25
o
C
(Note 1a)
Maximum Drain Current -Pulsed
Maximum Power Dissipation T
C
= 25
o
C
(Note 1)
T
A
= 25
o
C
(Note 1a)
T
A
= 25
o
C
(Note 1b)
Operating and Storage Junction Temperature Range
P
D
W
T
J
, T
stg
°
C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
Thermal Resistance, Junction-to-Case
(Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1a)
1.8
40
96
°
C/W
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDD6670A
FDD6670A
Reel Size
13
’’
Tape width
16mm
Quantity
2500
相關(guān)PDF資料
PDF描述
FDD6670AL 30V N-Channel PowerTrench MOSFET
FDD6670A N-Channel, Logic Level, PowerTrench MOSFET
FDD6670AS 30V N-Channel PowerTrench SyncFET
FDD6670AS_NL 30V N-Channel PowerTrench SyncFET
FDD6672A null30V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD6670A 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6670A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 76A TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:3 ;RoHS Compliant: Yes
FDD6670A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 66A, TO-252
FDD6670A_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDD6670A_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*