參數(shù)資料
型號(hào)： FDC6332L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 外設(shè)及接口
英文描述： Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET
中文描述： 1 A BUF OR INV BASED PRPHL DRVR, PDSO6
封裝： SUPER SOT-6
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 149K
代理商： FDC6332L
June 2003
2003Fairchild Semiconductor Corporation
FDC6332L Rev D(W)
FDC6332L
Common Source Load Switch
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This Load Switch integrates an N-Channel Power
MOSFET that drives Common-Source P-Channels and
in a small SuperSot
–6 package. It uses Fairchild’s
advanced low voltage PowerTrench process. The
R
DS(ON)
is 750 m
per the switch @ V
GS
1.8Vand is
optimized for battery power management applications.
Applications
Battery management/Charger Application
Accessory load switching
Features
–1 A, 8
V. R
DS(ON)
= 350 m
@ V
GS
= –4.5 V
R
DS(ON)
= 500 m
@ V
GS
= –2.5 V
R
DS(ON)
= 750 m
@ V
GS
= –1.8 V
N-Channel MOSFET includes Zener protection for
ESD ruggedness (>6KV Human body model)
High performance trench technology for extremely
low R
DS(ON)
D1
S2
G1
D2
S1
G2
SuperSOT -6
Pin 1
SuperSOT-6
On/Off
G1/G2
Vin
S1/S2
Vout
GND
6
5
4
1
2
3
V
DROP
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
IN
V
ON
I
Load
Parameter
Ratings
±
8
8
–1.0
–2.0
0.7
–55 to +150
Units
V
V
A
Input Voltage
Turn-On Voltage
Load Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
– Continuous
– Pulsed
(Note 1)
P
D
T
J
, T
STG
(Note 1)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
160
90
°
C/W
(Note 1)
Package Marking and Ordering Information
Device
.332
FDC6332L
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
Equivalent Circuit
IN
OUT
ON/OFF
相關(guān)PDF資料
PDF描述
FDC6333C 30V N & P-Channel PowerTrench MOSFETs
FDC633N N-Channel Enhancement Mode Field Effect Transistor(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)晶體管)
FDC634 P-Channel Enhancement Mode Field Effect Transistor
FDC634P P-Channel Enhancement Mode Field Effect Transistor(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)晶體管)
FDC636P P-Channel Logic Level Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC6332L_Q 功能描述:MOSFET 1.8V P-Ch MOSFET Common Source RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6333C 功能描述:MOSFET 30V/-30V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6333C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NP CH 30V 2.5/2A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
FDC6333C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 30V SUPER SOT-6
FDC6333C_Q 功能描述:MOSFET 30V/-30V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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