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參數(shù)資料
| 型號： | FDC6333C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N & P-Channel PowerTrench MOSFETs |
| 中文描述： | 2500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 98K |
| 代理商： | FDC6333C |
October 2001
2001 Fairchild Semiconductor Corporation
FDC6333C Rev C (W)
FDC6333C
30V N & P-Channel PowerTrench
MOSFETs
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
DC/DC converter
Load switch
LCD display inverter
Features
Q1
2.5 A, 30V.
R
DS(ON)
= 95 m
@ V
GS
= 10 V
R
DS(ON)
= 150 m
@ V
GS
= 4.5 V
Q2
–2.0 A, 30V.
R
DS(ON)
= 150 m
@ V
GS
= –10 V
R
DS(ON)
= 220 m
@ V
GS
= –4.5 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
D1
S2
G1
D2
S1
G2
SuperSOT -6
Pin 1
SuperSOT-6
3
2
1
4
5
6
Q1(N)
Q2(P)
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Q1
30
±
16
2.5
8
Q2
–30
±
25
–2.0
–8
Units
V
V
A
(Note 1a)
(Note 1a)
0.96
0.9
0.7
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
.333
FDC6333C
(Note 1a)
130
60
°
C/W
°
C/W
(Note 1)
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC633N | N-Channel Enhancement Mode Field Effect Transistor(P溝道增強型MOS場效應(yīng)晶體管) |
| FDC634 | P-Channel Enhancement Mode Field Effect Transistor |
| FDC634P | P-Channel Enhancement Mode Field Effect Transistor(P溝道增強型MOS場效應(yīng)晶體管) |
| FDC636P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDC637AN | Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6333C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NP CH 30V 2.5/2A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes |
| FDC6333C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 30V SUPER SOT-6 |
| FDC6333C_Q | 功能描述:MOSFET 30V/-30V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6333C-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC6333C Series 30 V 95 mOhm N & P-Channel PowerTrench Mosfet - SSOT-6 |
| FDC633N | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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