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參數(shù)資料
| 型號： | F49B002UA |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 2 Mbit (256K x 8) 5V Only CMOS Flash Memory |
| 中文描述： | 2兆位（256K × 8）5V的只有閃存的CMOS |
| 文件頁數(shù)： | 11/33頁 |
| 文件大?。?/td> | 335K |
| 代理商： | F49B002UA |
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EFS T
F49B002UA
Elite Flash Storage Technology Inc.
Publication Date : Sep. 2006
Revision: 1.4 11/33
8. ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . . . . . –65
°
C to +150
°
C
Ambient Temperature
with Power Applied. . . . . . . .. . . . . . . . . . . 0
°
C to +70
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . . . . . . . . . . . . . .
A9 (Note 2) …. . . .. . . . . . . . . . . . . . . . . . –0.5 V to +12.5 V
All other pins (Note 1). . . . . . . . . . . . . . . . –0.5 V to V
CC
+0.5 V
Output Short Circuit Current (Note 3) .. . .. 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot
V
SS
to –2.0 V for periods of up to 20 ns. See Figure 1. Maximum DC voltage on input or I/O pins is V
CC
+0.5 V.
During voltage transitions, input or I/O pins may overshoot to V
CC
+2.0 V for periods up to 20 ns. See Figure
2.
2. Minimum DC input voltage on pins A9 is -0.5 V. During voltage transitions, A9 may overshoot V
SS
to –2.0 V for
periods of up to 20 ns. See Figure 1. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to
14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at these or any other conditions above those indicated in the
operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
Figure 1. Maximum Negative Overshoot Waveform
–0.5 V to +6.5 V
+0.8V
-0.5V
-2.0V
20ns
20ns
20ns
Figure 2. Maximum Positive Overshoot Waveform
Vc c
+2.0V
Vc c
+0.5V
2.0V
20ns
20ns
20ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F49B002UA-70D | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2 Mbit (256K x 8) 5V Only CMOS Flash Memory |
| F49B002UA-70N | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2 Mbit (256K x 8) 5V Only CMOS Flash Memory |
| F49L004BA | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-70N | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
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