參數(shù)資料
型號(hào): F49B002UA-70N
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 2 Mbit (256K x 8) 5V Only CMOS Flash Memory
中文描述: 2兆位(256K × 8)5V的只有閃存的CMOS
文件頁(yè)數(shù): 16/33頁(yè)
文件大?。?/td> 335K
代理商: F49B002UA-70N
EFS T
F49B002UA
Elite Flash Storage Technology Inc.
Publication Date : Sep. 2006
Revision: 1.4 16/33
Table 11.
CE
Controlled Program/Erase Operations(T
A
= 0C to 70C, V
CC
= 4.5V~5.5V)
-70
-90
Symbol
Description
Min.
Max.
Min.
Max.
Unit
t
WC
Write Cycle Time (Note 1)
70
90
ns
t
AS
Address Setup Time
0
0
ns
t
AH
Address Hold Time
45
45
ns
t
DS
Data Setup Time
35
35
ns
t
DH
Data Hold Time
0
0
ns
t
OES
Output Enable Setup Time
0
0
ns
t
GHEL
Read Recovery Time Before Write
0
0
ns
t
WS
WE
Setup Time
0
0
ns
t
WH
WE
Hold Time
0
0
ns
t
CP
CE
Pulse Width
35
35
ns
t
CPH
CE
Pulse Width High
30
30
ns
t
WHWH1
Programming Operation(note2)
10(typ.)
10(typ.)
us
t
WHWH2
Sector Erase Operation (note2)
1.5(typ.)
1.5(typ.)
sec
Notes :
1. Not 100% tested.
2. See the "Programming & Erasing operation performance" section for more information.
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