參數(shù)資料
型號(hào)： F28F008SA-120
廠商： INTEL CORP
元件分類： DRAM
英文描述： 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
中文描述： 1M X 8 FLASH 12V PROM, 120 ns, PDSO40
封裝： 10 X 20 MM, REVERSE, TSOP-40
文件頁(yè)數(shù)： 16/33頁(yè)
文件大?。?/td> 466K
代理商： F28F008SA-120
28F008SA
290429–8
Bus
Command
Comments
Operation
Write
Erase
Setup
Data
e
20H
Address
e
Within block to be
erased
Write
Erase
Data
e
D0H
Address
e
Within block to be
erased
Standby/Read
Check RY/BY
Y
V
OH
e
Ready, V
OL
e
Busy
or
Read Status Register
Check SR.7
1
e
Ready, 0
e
Busy
Toggle OE
Y
or CE
Y
to
update Status Register
Repeat for subsequent bytes
Full status check can be done after each block or after a
sequence of blocks
Write FFH after the last block erase operation to reset the
device to Ready Array Mode
FULL STATUS CHECK PROCEDURE
290429–9
Bus
Command
Comments
Operation
Optional
Read
CPU may already have read
Status Register data in WSM
Ready polling above
Standby
Check SR.3
1
e
V
PP
Low Detect
Standby
Check SR.4,5
Both 1
e
Command Sequence
Error
Standby
Check SR.5
1
e
Block Erase Error
SR.3 MUST be cleared, if set during a block erase attempt,
before further attempts are allowed by the Write State
Machine
SR.5 is only cleared by the Clear Status Register
Command, in cases where multiple blocks are erased
before full status is checked.
If error is detected, clear the Status Register before
attempting retry or other error recovery.
Figure 8. Automated Block Erase Flowchart
16
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F28F008SA-200L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
F28F008SA-85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
F28F008SA-90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
F28F008SA-L250 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
F28F010-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1024K (128K x 8) CMOS FLASH MEMORY
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