參數(shù)資料
型號: F25L008A-50PAG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 1M X 8 FLASH 3V PROM, PDSO8
封裝: 0.200 INCH, LEAD FREE, SOIC-8
文件頁數(shù): 16/31頁
文件大小: 374K
代理商: F25L008A-50PAG
ES MT
4K-Byte-Sector-Erase
The Sector-Erase instruction clears all bits in the selected sector
to FFH. A Sector-Erase instruction applied to a protected
memory area will be ignored. Prior to any Write operation, the
Write-Enable (WREN) instruction must be executed. CE must
remain active low for the duration of the any command sequence.
The Sector-Erase instruction is initiated by executing an 8-bit
command, 20H, followed by address bits [A
23
-A
0
]. Address bits
CE
F25L008A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.4
16/31
Publication Date
:
May. 2007
[A
MS
-A
12
] (A
MS
= Most Significant address) are used to determine
the sector address (SA
X
), remaining address bits can be VIL or
VIH. CE must be driven high before the instruction is executed.
The user may poll the Busy bit in the software status register or
wait TSE for the completion of the internal self-timed
Sector-Erase cycle. See Figure 6 for the Sector-Erase sequence.
SCK
SI
0 1 2 3 4 5 6 7 8
15 16
23 24
31
MSB
MSB
HIGH IMPENANCE
SO
20
ADD.
ADD.
ADD.
MODE3
MODE0
FIGURE 6 : SEQUENCE-ERASE SEQUENCE
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