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參數(shù)資料
| 型號： | F25L008A-50PAG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 1M X 8 FLASH 3V PROM, PDSO8 |
| 封裝： | 0.200 INCH, LEAD FREE, SOIC-8 |
| 文件頁數(shù)： | 15/31頁 |
| 文件大小： | 374K |
| 代理商： | F25L008A-50PAG |
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64K-Byte Block-Erase
The 64K Byte Block-Erase instruction clears all bits in the
selected block to FFH. A Block-Erase instruction applied to a
protected memory area will be ignored. Prior to any Write
operation, the Write-Enable (WREN) instruction must be
executed. CE must remain active low for the duration of the any
command sequence. The Block-Erase instruction is initiated by
executing an 8-bit command, D8H, followed by address bits
F25L008A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.4
15/31
Publication Date
:
May. 2007
[A
23
-A
0
]. Address bits [A
MS
-A
16
] (A
MS
= Most Significant address)
are used to determine the block address (BA
X
), remaining
address bits can be VIL or VIH. CE must be driven high before
the instruction is executed. The user may poll the Busy bit in the
software status register or wait TBE for the completion of the
internal self-timed Block-Erase cycle. See Figure 5 for the
Block-Erase sequence.
FIGURE 5 : 64-KBYTE BLOCK-ERASE SEQUENCE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F25L008A-50PAIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8Mbit (1Mx8) 3V Only Serial Flash Memory |
| F25L016A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory |
| F25L016A_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory |
| F25L016A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory |
| F25L016A-100PAG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory |
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