參數(shù)資料
型號: F25L004A
廠商: Elite Semiconductor Memory Technology Inc.
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 21/32頁
文件大?。?/td> 393K
代理商: F25L004A
ES MT
Read-Electronic-Signature (RES)
The RES instruction can be used to read the 8-bit Electronic Signature of the device on the SO pin. The RES instruction can provide
access to the Electronic Signature of the device (except while an Erase, Program or WRSR cycle is in progress), Any ERS instruction
executed while an Erase, Program or WRSR cycle is in progress is no decoded, and has no effect on the cycle in progress.
F25L004A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
21/32
Publication Date
:
Apr. 2007
Figure 16 : Read-Electronic-Signature (RES)
CE
SCK
SI
0
1
2
3
4
5
6
7
8
9
Bit7
MSB
MSB
HIGH IMPENANCE
SO
AB
MODE3
MODE1
10
11
12
13
14
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
Status
Register Out
相關PDF資料
PDF描述
F25L004A-100DG 4 Mbit Uniform Sector, Serial Flash Memory
F25L004A-100PAG 4 Mbit Uniform Sector, Serial Flash Memory
F25L004A-100PG 4 Mbit Uniform Sector, Serial Flash Memory
F25L004A-50DG 4 Mbit Uniform Sector, Serial Flash Memory
F25L004A-50PAG 4 Mbit Uniform Sector, Serial Flash Memory
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F25L004A-100PAG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:3V Only 4 Mbit Serial Flash Memory