參數(shù)資料
型號(hào)： F25L004A
廠商： Elite Semiconductor Memory Technology Inc.
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁(yè)數(shù)： 17/32頁(yè)
文件大?。?/td> 393K
代理商： F25L004A
ES MT
Chip-Erase
The Chip-Erase instruction clears all bits in the device to FFH. A
Chip-Erase instruction will be ignored if any of the memory area
is protected. Prior to any Write operation, the Write-Enable
(WREN) instruction must be executed. CE must remain active
low for the duration of the Chip-Erase instruction sequence. The
Chip-Erase instruction is initiated by executing an 8-bit command,
F25L004A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
17/32
Publication Date
:
Apr. 2007
60H or C7H. CE must be driven high before the instruction is
executed. The user may poll the Busy bit in the software status
register or wait T
CE
for the completion of the internal self-timed
Chip-Erase cycle.
See Figure 11 for the Chip-Erase sequence.
FIGURE 11 : CHIP-ERASE SEQUENCE
Read-Status-Register (RDSR)
The Read-Status-Register (RDSR) instruction allows reading of
the status register. The status register may be read at any time
even during a Write (Program/Erase) operation.
When a Write operation is in progress, the Busy bit may be
checked before sending any new commands to assure that the
new commands are properly received by the device.
CE must be driven low before the RDSR instruction is entered
and
Read-Status-Register is continuous with ongoing clock cycles
until it is terminated by a low to high transition of the CE
See Figure 12 for the RDSR instruction sequence.
remain
low
until
the
status
data
is
read.
Figure12 : READ-STATUS-REGISTER (RDSR) SEQUENCE
CE
SCK
SI
0
1
2
3
4
5
6
7
8
9
Bit7
MSB
MSB
HIGH IMPENANCE
SO
05
MODE3
MODE1
10
11
12
13
14
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
Status
Register Out
CE
SCK
SI
0 1 2 3 4 5 6 7
MSB
HIGH IMPENANCE
SO
60 orC7
MODE3
MODE0
相關(guān)PDF資料
PDF描述
F25L004A-100DG 4 Mbit Uniform Sector, Serial Flash Memory
F25L004A-100PAG 4 Mbit Uniform Sector, Serial Flash Memory
F25L004A-100PG 4 Mbit Uniform Sector, Serial Flash Memory
F25L004A-50DG 4 Mbit Uniform Sector, Serial Flash Memory
F25L004A-50PAG 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F25L004A_09 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:3V Only 4 Mbit Serial Flash Memory
F25L004A_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:3V Only 4 Mbit Serial Flash Memory Operation Temperature Condition -40°C ~85°C
F25L004A-100DG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4Mbit (512Kx8) 3V Only Serial Flash Memory
F25L004A-100DIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:3V Only 4 Mbit Serial Flash Memory Operation Temperature Condition -40°C ~85°C
F25L004A-100PAG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:3V Only 4 Mbit Serial Flash Memory
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