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參數(shù)資料
| 型號： | F1003 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 專利金金屬化硅柵增強型射頻功率VDMOS晶體管 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 104K |
| 代理商： | F1003 |
AC Electrical Characteristics
(Continued)
Note 10:
Not tested at +25C, +125C, and 55C temperature (design characterization data).
Note 11:
The propagation delay specified is for single output switching. Delays may vary up to 200 ps with multiple outputs switching.
Test Circuit
Switching Waveforms
DS100308-5
Notes:
V
, V
= +2V, V
= 2.5V
L1 and L2 = equal length 50
impedance lines
R
T
= 50
terminator internal to scope
Decoupling 0.1 μF from GND to V
CC
and V
EE
All unused outputs are loaded with 50
to GND
C
L
= Fixture and stray capacitance
≤
3 pF
FIGURE 1. AC Test Circuit
DS100308-6
FIGURE 2. Propagation Delay and Transition Times
www.national.com
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