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| 型號(hào)： | EN29LV160B-90TI |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 16兆位（2048K × 8位/ 1024K x 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁(yè)數(shù)： | 2/45頁(yè) |
| 文件大?。?/td> | 438K |
| 代理商： | EN29LV160B-90TI |
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This Data Sheet may be revised by subsequent versions
2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
10
EN29LV160
Rev. A, Issue Date: 2004/03/30
then be device-independent, JEDEC ID-
independent, and forward- and backward-
compatible for the specified flash device
families. Flash vendirs can standardize their
existing interfaces for long-term compatibility.
This device enters the CFI Query mode when
the system writes the CFI Query command,
98h, to address 55h in word mode (or
address AAh in byte mode), any time the
device is ready to read array data.
The system can read CFI information at the
addresses given in Tables 5-8. In word mode,
the upper address bits (A7–MSB) must be all
zeros. To terminate reading CFI data, the
system must write the reset command.
The system can also write the CFI query
command when the device is in the
autoselect mode. The device enters the CFI
query mode and the system can read CFI
data at the addresses given in Tables 5–8.
The system must write the reset command to
return the device to the autoselect mode.
Table 5. CFI Query Identification String
Adresses
(Word Mode)
Adresses
(Byte Mode)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
Alternate OEM Command set (00h = none exists)
19h
1Ah
32h
34h
0000h
Address for Alternate OEM Extended Table (00h = none exists
Table 6. System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0027h
Vcc Min (write/erase)
D7-D4: volt, D3 –D0: 100 millivolt
1Ch
38h
0036h
Vcc Max (write/erase)
D7-D4: volt, D3 –D0: 100 millivolt
1Dh
3Ah
0000h
Vpp Min. voltage (00h = no Vpp pin present)
1Eh
3Ch
0000h
Vpp Max. voltage (00h = no Vpp pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2^N
s
20h
40h
0000h
Typical timeout for Min, size buffer write 2^N
s (00h = not
supported)
21h
42h
000Ah
Typical timeout per individual block erase 2^N ms
22h
44h
0000h
Typical timeout for full chip erase 2^N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2^N times typical
24h
48h
0000h
Max. timeout for buffer write 2^N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2^N times typical
26h
4Ch
0000h
Max timeout for full chip erase 2^N times typical (00h = not
supported)
Table 7. Device Geometry Definition
Addresses
(Word mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0015h
Device Size = 2^N byte
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