參數(shù)資料
型號： EN29LV160B-90TI
廠商： Eon Silicon Solution Inc.
英文描述： 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述： 16兆位（2048K × 8位/ 1024K x 16位）閃存引導扇區(qū)閃存，CMOS 3.0伏，只
文件頁數(shù)： 19/45頁
文件大?。?/td> 438K
代理商： EN29LV160B-90TI
This Data Sheet may be revised by subsequent versions
2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
26
EN29LV160
Rev. A, Issue Date: 2004/03/30
Table 11. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Notes
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
they draw power if not at full CMOS supply voltages.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ Vcc
±5
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ Vcc
±5
A
Supply Current (read) CMOS Byte
9
16
mA
ICC1
(read) CMOS Word
CE# = VIL ; OE# = VIH ;
f = 5MHZ
9
16
mA
Supply Current (Standby - TTL)
CE# = VIH,
BYTE# = RESET# =
Vcc ± 0.3V
(Note 1)
0.4
1.0
mA
ICC2
(Standby - CMOS)
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
1
5.0
A
ICC3
Supply Current (Program or Erase)
Byte program, Sector or
Chip Erase in progress
20
30
mA
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
0.7 x
Vcc
Vcc ±
0.3
V
VOL
Output Low Voltage
IOL = 4.0 mA
0.45
V
Output High Voltage TTL
IOH = -2.0 mA
0.85 x
Vcc
V
VOH
Output High Voltage CMOS
IOH = -100 A,
Vcc -
0.4V
V
VID
A9 Voltage (Electronic Signature)
10.5
11.5
V
IID
A9 Current (Electronic Signature)
A9 = VID
100
A
VLKO
Supply voltage (Erase and
Program lock-out)
2.3
2.5
V
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