參數(shù)資料
型號: EDS1232AABB-60L
英文描述: Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN T&R
中文描述: 內(nèi)存| 4X1MX32 |的CMOS | BGA封裝| 90PIN |塑料
文件頁數(shù): 41/55頁
文件大?。?/td> 570K
代理商: EDS1232AABB-60L
EDS1232AABB, EDS1232AATA
Data Sheet E0205E30 (Ver. 3.0)
46
Read Cycle/Write Cycle
0
1
2
3
4
5
6
7
8
9
1011
121314
151617
181920
R:a
C:a
R:b
C:b
C:b'
C:b"
a
a+1 a+2 a+3
b
b+1 b+2 b+3 b'
b'+1 b"
b"+1 b"+2 b"+3
CKE
/RAS
/CS
/CAS
/WE
Address
DQM
DQ (output)
DQ (input)
CLK
BS
R:a
C:a
R:b
C:b
C:b'
C:b"
a
a+1 a+2 a+3
b
b+1 b+2 b+3 b'
b'+1 b"
b"+1 b"+2 b"+3
Bank 0
Active
Bank 0
Read
Bank 3
Active
Bank 3
Read
Bank 3
Read
Bank 3
Read
Bank 0
Precharge
Bank 3
Precharge
Bank 0
Active
Bank 0
Write
Bank 3
Active
Bank 3
Write
Bank 3
Write
Bank 3
Write
Bank 0
Precharge
Bank 3
Precharge
CKE
/RAS
/CS
/CAS
/WE
Address
DQM
DQ (input)
DQ (output)
BS
High-Z
VIH
Read cycle
/RAS-/CAS delay = 3
/CAS latency = 3
Burst length = 4
= VIH or VIL
Write cycle
/RAS-/CAS delay = 3
/CAS latency = 3
Burst length = 4
= VIH or VIL
VIH
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