參數(shù)資料
型號(hào)： EDS1232AABB-60
英文描述： Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN
中文描述： 內(nèi)存| 4X1MX32 |的CMOS | BGA封裝| 90PIN |塑料
文件頁(yè)數(shù)： 5/55頁(yè)
文件大小： 570K
代理商： EDS1232AABB-60
EDS1232AABB, EDS1232AATA
Data Sheet E0205E30 (Ver. 3.0)
13
Precharge command (/CS, /RAS, /WE = Low, /CAS = High)
This command begins precharge operation of the bank selected by BA0 and BA1. When A10 is High, all banks are
precharged, regardless of BA0 and BA1. When A10 is Low, only the bank selected by BA0 and BA1 is precharged.
After this command, the Synchronous DRAM can’t accept the activate command to the precharging bank during tRP
(precharge to activate command period). This command corresponds to a conventional DRAM’s /RAS rising.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0, BA1
(Bank select)
(Precharge select)
Precharge Command
Write command (/CS, /CAS, /WE = Low, /RAS = High)
If the mode register is in the burst write mode, this command sets the burst start address given by the column
address to begin the burst write operation. The first write data in burst mode can input with this command with
subsequent data on following clocks.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0, BA1
(Bank select)
Col.
Column Address and Write Command
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