參數(shù)資料
型號： EDL1216AASA-75
英文描述： Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 12-DFN T&R
中文描述： 內(nèi)存| 4X2MX16 |的CMOS | BGA封裝| 54PIN |塑料
文件頁數(shù)： 13/59頁
文件大?。?/td> 489K
代理商： EDL1216AASA-75
EDL1216AASA
Data Sheet E0196E20 (Ver. 2.0)
20
Initialization
The synchronous DRAM is initialized in the power-on sequence according to the following.
(1) To stabilize internal circuits, when power is applied, a 200
s or longer pause must precede any signal toggling.
(2) After the pause, all banks must be precharged using the Precharge command (The Precharge all banks
command is convenient).
(3) Once the precharge is completed and the minimum tRP is satisfied, two or more Auto refresh must be performed.
(4) Both the mode register and the extended mode register must be programmed. After the mode register set cycle
or the extended mode register set cycle, tRSC (2 CLK minimum) pause must be satisfied.
Remarks:
1
The sequence of Auto refresh, mode register programming and extended mode register programming above may
be transposed.
2
CKE and DQM must be held high until the Precharge command is issued to ensure data-bus High-Z.
Programming Mode Registers
The mode register and extended mode register are programmed by the Mode register set command and Extended
mode register command, respectively using address bits A11 through A0, BA0 (A13) and BA1 (A12) as data inputs.
The registers retain data until they are re-programmed, or the device enters into the deep power down or the device
loses power.
Mode register
The mode register has three fields;
Options
:
A11 through A7
/CAS latency
:
A6 through A4
Wrap type
:
A3
Burst length
:
A2 through A0
Following mode register programming, no command can be issued before at least 2 CLK have elapsed.
/CAS Latency
/CAS latency is the most critical of the parameters being set. It tells the device how many clocks must elapse before
the data will be available. The value is determined by the frequency of the clock and the speed grade of the device.
Burst Length
Burst Length is the number of words that will be output or input in a read or write cycle. After a read burst is
completed, the output bus will become High-Z. The burst length is programmable as 1, 2, 4, 8 or full page.
Wrap Type (Burst Sequence)
The wrap type specifies the order in which the burst data will be addressed. This order is programmable as either
“Sequential” or “Interleave”. The method chosen will depend on the type of CPU in the system.
Some microprocessor cache systems are optimized for sequential addressing and others for interleaved addressing.
“Burst Length Sequence” shows the addressing sequence for each burst length using them.
Both sequences
support bursts of 1, 2, 4 and 8. Additionally, sequence supports the full page length.
相關(guān)PDF資料
PDF描述
EDL1216BASA-75 Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 12-DFN T&R
EDL1216CASA-10 Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN
EDS1232AABB-60 Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN
EDS1232AABB-60L Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN T&R
EDS1232AABB-75 Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN T&R
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDL1216AASA-75-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits Mobile RAM
EDL1216BASA-75 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC
EDL1216CASA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits Mobile RAM
EDL1216CASA-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC
EDL1216CASA-10-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits Mobile RAM
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