參數(shù)資料
型號: EDD2516AKTA-7A-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 256M bits DDR SDRAM (16M words x 16 bits)
中文描述: 16M X 16 DDR DRAM, 0.75 ns, PDSO66
封裝: ROHS COMPLIANT, PLASTIC, TSOP2-66
文件頁數(shù): 8/49頁
文件大小: 564K
代理商: EDD2516AKTA-7A-E
EDD2516AKTA-E
Data Sheet E0502E30 (Ver. 3.0)
8
13. tDAL = (tWR/tCK)+(tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For –7A Speed at CL = 2.5, tCK = 7.5ns, tWR = 15ns and tRP= 20ns,
tDAL = (15ns/7.5ns) + (20ns/7.5ns) = (2) + (3)
tDAL = 5 clocks
Test Conditions
Parameter
Symbol
Value
Unit
Input reference voltage
VREF
VDDQ/2
V
Termination voltage
VTT
VREF
V
Input high voltage
VIH (AC)
VREF
+
0.31
V
Input low voltage
VIL (AC)
VREF
0.31
V
Input differential voltage, CK and /CK
inputs
Input differential cross point voltage,
CK and /CK inputs
VID (AC)
0.62
V
VIX (AC)
VREF
V
Input signal slew rate
SLEW
1
V/ns
VTT
VREF
VSS
/CK
CK
VREF
VSS
SLEW = (VIH (AC) – VIL (AC))/
t
Measurement point
VIH
VIL
VDD
VDD
DQ
RT = 50
CL = 30pF
VIX
t
tCL
tCK
tCH
VID
Input Waveforms and Output Load
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