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參數(shù)資料
| 型號： | ECP100G |
| 英文描述： | 1 Watt, High Gain HBT Amplifier |
| 中文描述： | 1瓦特，高增益異質(zhì)結(jié)雙極晶體管放大器 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 795K |
| 代理商： | ECP100G |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 6 of 9 June 2005
AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
Application Note: Reduced Bias Configurations
The AH215 / ECP100 can be configured to be operated with lower bias current by varying the bias-adjust resistor – R1. The
recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation.
Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the
ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH215 /
ECP100 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other
frequency applications will produce similar performance results.
AH215-PCB2140 Performance Data
R1
(ohms)
Icq
(mA)
Pdiss
(W)
P1dB
(dBm)
OIP3
(dBm)
51
450
2.25
+31.0
+47.1
68
400
2.00
+30.9
+46.4
100
350
1.75
+30.8
+46.4
130
300
1.50
+30.6
+45.5
180
250
1.25
+30.5
+43.6
2.14GHz Gain vs. Output Power
8.5
9
9.5
10
10.5
11
11.5
16
18
20
22
24
26
28
30
32
Output Power (dBm)
Ga
in
(d
B
)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
2.14GHz OIP3 vs. Output Power per Tone
30
35
40
45
50
10
12
14
16
18
20
22
24
Power Out per Tone (dBm)
OI
P3
(
d
Bm)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
W-CDMA ACLR vs. Output Channel Power
3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset
-65
-60
-55
-50
-45
-40
-35
12
14
16
18
20
22
24
W-CDMA Channel Power Out (dBm)
AC
LR
(d
Bc
)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
CW PAE vs. Output Power
1
10
100
16
18
20
22
24
26
28
30
32
CW Tone Power Out (dBm)
PAE
(
%
)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
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