參數(shù)資料
型號: ECP100G
英文描述: 1 Watt, High Gain HBT Amplifier
中文描述: 1瓦特,高增益異質(zhì)結(jié)雙極晶體管放大器
文件頁數(shù): 3/9頁
文件大小: 795K
代理商: ECP100G
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 3 of 9 June 2005
AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
900 MHz Application Circuit (AH215-S8PCB900)
Typical RF Performance at 25
°°°°C
Frequency
900 MHz
S21 – Gain
18 dB
S11 – Input Return Loss
-13 dB
S22 – Output Return Loss
-7.0 dB
Output P1dB
+31 dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing)
+46 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
+25.5 dBm
Noise Figure
7.0 dB
Device / Supply Voltage
+5 V
Quiescent Current (1)
450 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency (MHz)
8
10
12
14
16
18
20
840
860
880
900
920
940
Frequency (MHz)
S
21
(
d
B
)
+25°C
+85°C
-40°C
S11 vs. Frequency
-20
-16
-12
-8
-4
0
840
860
880
900
920
940
Frequency (MHz)
S
11
(
d
B
)
+25°C
+85°C
-40°C
S22 vs. Frequency
-20
-16
-12
-8
-4
0
840
860
880
900
920
940
Frequency (MHz)
S
22
(
d
B
)
+25°C
+85°C
-40°C
Noise Figure vs. Frequency
5
6
7
8
9
10
840
860
880
900
920
940
Frequency (MHz)
NF
(
d
B
)
+25°C
+85°C
-40°C
P1 dB vs. Frequency
24
26
28
30
32
34
840
860
880
900
920
940
Frequency (MHz)
P1
d
B
(
d
B
m
)
+25°C
+85°C
-40°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885 KHz offset, 30 KHz Meas BW, 900 MHz
-70
-65
-60
-55
-50
-45
-40
19
20
21
22
23
24
25
26
27
Output Channel Power (dBm)
AC
P
R
(
d
Bc)
+25°C
+85°C
-40°C
OIP3 vs. Output Power
freq. = 900, 901 MHz, +25°C
35
38
41
44
47
50
10
13
16
19
22
25
Output Power (dBm)
OI
P
3
(
d
B
m
)
OIP3 vs. Temperature
freq. = 900, 901 MHz, +15 dBm
35
38
41
44
47
50
-40
-15
10
35
60
85
Temperature (°C )
OI
P
3
(
d
B
m
)
OIP3 vs. Frequency
+25°C, +15 dBm / tone
35
38
41
44
47
50
840
860
880
900
920
940
Frequency (MHz)
OI
P
3
(d
Bm
)
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