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參數資料
| 型號： | EBE10RD4ABFA |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
| 中文描述： | 1GB的注冊DDR2 SDRAM DIMM內存（128M的字× 72位，1個等級） |
| 文件頁數： | 12/22頁 |
| 文件大小： | 190K |
| 代理商： | EBE10RD4ABFA |
EBE10RD4AEFA
Data Sheet E0644E30 (Ver. 3.0)
12
Parameter
Symbol Grade
max.
Unit
Test condition
tCK = tCK (IDD);
Refresh command at every tRFC (IDD) interval;
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Self Refresh Mode;
CK and /CK at 0V;
CKE
≤
0.2V;
Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
all bank interleaving reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = tRCD (IDD)
1
×
tCK (IDD);
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD),
tRCD = 1
×
tCK (IDD);
CKE is H, CS is H between valid commands;
Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4W;
-5C
5030
Auto-refresh current
IDD5
-4A
4630
mA
Self-refresh current
IDD6
150
mA
-5C
6250
Operating current
(Bank interleaving)
IDD7
-4A
5770
mA
Notes: 1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by AC Input Test Condition.
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, /DQS, RDQS, /RDQS, LDQS, /LDQS, UDQS, and /UDQS. IDD
values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
L is defined as VIN
≤
VIL (AC) (max.)
H is defined as VIN
≥
VIH (AC) (min.)
STABLE is defined as inputs stable at an H or L level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between H and L every other clock cycle (once per two clocks) for address and control
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals
not including masks or strobes.
6. Refer to AC Timing for IDD Test Conditions.
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR2-533
DDR2-400
Parameter
4-4-4
3-3-3
Unit
CL(IDD)
4
3
tCK
tRCD(IDD)
15
15
ns
tRC(IDD)
60
55
ns
tRRD(IDD)
7.5
7.5
ns
tCK(IDD)
3.75
5
ns
tRAS(min.)(IDD)
45
40
ns
tRAS(max.)(IDD)
70000
70000
ns
tRP(IDD)
15
15
ns
tRFC(IDD)
105
105
ns
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相關代理商/技術參數 |
參數描述 |
|---|---|
| EBE10RD4ABFA-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
| EBE10RD4ABFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
| EBE10RD4AEFA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
| EBE10RD4AEFA-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
| EBE10RD4AEFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
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