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參數(shù)資料
| 型號： | EBE10RD4ABFA |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
| 中文描述： | 1GB的注冊DDR2 SDRAM DIMM內(nèi)存（128M的字× 72位，1個等級） |
| 文件頁數(shù)： | 11/22頁 |
| 文件大?。?/td> | 190K |
| 代理商： | EBE10RD4ABFA |
EBE10RD4AEFA
Data Sheet E0644E30 (Ver. 3.0)
11
DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V)
Parameter
Symbol Grade
max.
Unit
Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open;
tCK = tCK (IDD);
CKE is L;
Other control and
address bus inputs are
STABLE;
Data bus inputs are
FLOATING
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP
(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
-5C
2440
Operating current
(ACT-PRE)
IDD0
-4A
2120
mA
-5C
2760
Operating current
(ACT-READ-PRE)
IDD1
-4A
2430
mA
-5C
700
Precharge power-down
standby current
IDD2P
-4A
620
mA
-5C
970
Precharge quiet standby
current
IDD2Q
-4A
840
mA
-5C
1060
Idle standby current
IDD2N
-4A
930
mA
-5C
1240
IDD3P-F
-4A
1110
mA
Fast PDN Exit
MRS(12) = 0
-5C
970
Active power-down standby
current
IDD3P-S
-4A
840
mA
Slow PDN Exit
MRS(12) = 1
-5C
1720
Active standby current
IDD3N
-4A
1580
mA
-5C
3660
Operating current
(Burst read operating)
IDD4R
-4A
3060
mA
-5C
3660
Operating current
(Burst write operating)
IDD4W
-4A
3060
mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EBE10RD4ABFA-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
| EBE10RD4ABFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
| EBE10RD4AEFA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
| EBE10RD4AEFA-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
| EBE10RD4AEFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) |
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