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參數(shù)資料
| 型號(hào)： | EBD52UC8AKFA-5 |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | JT 12C 8#20 4#16 SKT PLUG |
| 中文描述： | 512MB的DDR SDRAM的內(nèi)存緩沖（6400字× 64位，2個(gè)等級(jí)） |
| 文件頁(yè)數(shù)： | 12/19頁(yè) |
| 文件大?。?/td> | 199K |
| 代理商： | EBD52UC8AKFA-5 |
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EBD52UC8AKDA
Preliminary Data Sheet E0367E20 (Ver. 2.0)
12
Pin Capacitance (TA = 25°C, VDD = 2.5V ± 0.2V)
Parameter
Symbol
Pins
max.
Unit
Notes
Input capacitance
CI1
Address, /RAS, /CAS, /WE
TBD
pF
Input capacitance
CI2
CK, /CK, CKE, /CS
TBD
pF
Data and DQS input/output
capacitance
CO
DQ, DQS, DM
TBD
pF
AC Characteristics (TA = 0 to +70
°
C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
(DDR SDRAM Component Specification)
-6B
-7A
-7B
Parameter
Symbol
min.
max.
min.
max.
min.
max
Unit
Notes
Clock cycle time
(CL = 2)
(CL = 2.5)
tCK
7.5
12
7.5
12
10
12
ns
10
tCK
6
12
7.5
12
7.5
12
ns
CK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK half period
tHP
min
(tCH, tCL)
—
min
(tCH, tCL)
—
min
(tCH, tCL)
—
tCK
DQ output access time from
CK, /CK
DQS output access time from CK,
/CK
tAC
–0.7
0.7
–0.75
0.75
–0.75
0.75
ns
2, 11
tDQSCK –0.6
0.6
–0.75
0.75
–0.75
0.75
ns
2, 11
DQS to DQ skew
tDQSQ
—
0.45
—
0.5
—
0.5
ns
3
DQ/DQS output hold time from
DQS
Data hold skew factor
tQH
tHP – tQHS —
tHP – tQHS —
tHP – tQHS —
ns
tQHS
—
0.55
—
0.75
—
0.75
ns
Data-out high-impedance time from
CK, /CK
Data-out low-impedance time from
CK, /CK
tHZ
–0.7
0.7
–0.75
0.75
–0.75
0.75
ns
5, 11
tLZ
–0.7
0.7
–0.75
0.75
–0.75
0.75
ns
6, 11
Read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
DQ and DM input setup time
tDS
0.45
—
0.5
—
0.5
—
ns
8
DQ and DM input hold time
tDH
0.45
—
0.5
—
0.5
—
ns
8
DQ and DM input pulse width
tDIPW
1.75
—
1.75
—
1.75
—
ns
7
Write preamble setup time
tWPRES 0
—
0
—
0
—
ns
Write preamble
tWPRE
0.25
—
0.25
—
0.25
—
tCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
9
Write command to first DQS
latching transition
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CK setup time tDSS
0.2
—
0.2
—
0.2
—
tCK
DQS falling edge hold time from
CK
tDSH
0.2
—
0.2
—
0.2
—
tCK
DQS input high pulse width
tDQSH
0.35
—
0.35
—
0.35
—
tCK
DQS input low pulse width
tDQSL
0.35
—
0.35
—
0.35
—
tCK
Address and control input setup
time
tIS
0.75
—
0.9
—
0.9
—
ns
8
Address and control input hold time tIH
0.75
—
0.9
—
0.9
—
ns
8
Address and control input pulse
width
tIPW
2.2
—
2.2
—
2.2
—
ns
7
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| EBD52UC8AKFA-5B | 512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKFA-5C | JT 55C 55#22D SKT PLUG |
| EBD52UC8AKDA | 512MB DDR SDRAM SO DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKDA-7A | 512MB DDR SDRAM SO DIMM (64M words x 64 bits, 2 Ranks) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBD52UC8AKFA-5B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKFA-5B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKFA-5C | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKFA-5-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
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