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參數(shù)資料
| 型號： | EBD52UC8AKFA-5 |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | JT 12C 8#20 4#16 SKT PLUG |
| 中文描述： | 512MB的DDR SDRAM的內(nèi)存緩沖（6400字× 64位，2個等級） |
| 文件頁數(shù)： | 11/19頁 |
| 文件大?。?/td> | 199K |
| 代理商： | EBD52UC8AKFA-5 |
EBD52UC8AKDA
Preliminary Data Sheet E0367E20 (Ver. 2.0)
11
DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACTV-PRE)
IDD0
-6B
-7A, -7B
1320
1200
mA
CKE
≥
VIH,
tRC = tRC (min.)
CKE
≥
VIH, BL = 4,
CL = 2.5,
tRC = tRC (min.)
1, 2, 9
Operating current
(ACTV-READ-PRE)
IDD1
-6B
-7A, -7B
1560
1440
mA
1, 2, 5
Idle power down standby current
IDD2P
48
mA
CKE
≤
VIL
4
Floating idle standby current
IDD2F
-6B
-7A, -7B
-6B
-7A, -7B
560
480
480
400
mA
≥
VIH, /CS
≥
VIH,
CKE
≥
VIH, /CS
≥
VIH,
CKE
Quiet idle standby current
IDD2Q
mA
Active power down
standby current
IDD3P
320
mA
CKE
≤
VIL
3
Active standby current
IDD3N
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
880
800
2080
1840
2080
1840
3200
2800
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = tRAS (max.)
CKE
≥
VIH, BL = 2,
CL = 2.5
CKE
≥
VIH, BL = 2,
CL = 2.5
tRFC = tRFC (min.),
Input
≤
VIL or
≥
VIH
Input
≥
VDD – 0.2 V
Input
≤
0.2 V
3, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD4R
mA
1, 2, 5, 6
IDD4W
mA
1, 2, 5, 6
Auto refresh current
IDD5
mA
Self refresh current
IDD6
48
mA
Operating current
(4 banks interleaving)
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycles.
10. Command/Address stable at
≥
VIH or
≤
VIL.
IDD7A
-6B
-7A, -7B
3240
2800
mA
BL = 4
5, 6, 7
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–32
32
μA
VDD
≥
VIN
≥
VSS
Output leakage current
ILO
–10
10
μA
VDD
≥
VOUT
≥
VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
1
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
1
Note: 1. DDR SDRAM component specification.
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| EBD52UC8AKFA-5B | 512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKFA-5C | JT 55C 55#22D SKT PLUG |
| EBD52UC8AKDA | 512MB DDR SDRAM SO DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKDA-7A | 512MB DDR SDRAM SO DIMM (64M words x 64 bits, 2 Ranks) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EBD52UC8AKFA-5B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKFA-5B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKFA-5C | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
| EBD52UC8AKFA-5-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks) |
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