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參數(shù)資料
| 型號(hào)： | EBD21RD4ADNA-7A-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
| 中文描述： | 256M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | LEAD FREE, DIMM-184 |
| 文件頁(yè)數(shù)： | 10/19頁(yè) |
| 文件大?。?/td> | 201K |
| 代理商： | EBD21RD4ADNA-7A-E |
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EBD21RD4ADNA-E
Data Sheet E0606E10 (Ver. 1.0)
10
Electrical Specifications
All voltages are referenced to VSS (GND).
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–1.0 to +3.6
V
Supply voltage relative to VSS
VDD
–1.0 to +3.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PT
18
W
Operating ambient temperature
TA
0 to +70
°C
1
Storage temperature
Tstg
–55 to +125
°C
Note:1.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DDR SDRAM component specification
DC Operating Conditions (TA = 0 to +70°C) (DDR SDRAM Component Specification)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD,VDDQ
2.3
2.5
2.7
V
1
VSS
0
0
0
V
Input reference voltage
VREF
0.49
×
VDDQ
0.50
×
VDDQ 0.51
×
VDDQ
V
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
Input high voltage
VIH (DC)
VREF + 0.15
—
VDDQ + 0.3
V
2
Input low voltage
VIL (DC)
–0.3
—
VREF – 0.15
V
3
Input voltage level,
CK and /CK inputs
Input differential cross point
voltage, CK and /CK inputs
Input differential voltage,
CK and /CK inputs
Notes: 1. VDDQ must be lower than or equal to VDD.
2. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.
3. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
4. VIN (DC) specifies the allowable DC execution of each differential input.
5. VID (DC) specifies the input differential voltage required for switching.
6. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V
if measurement.
VIN (DC)
–0.3
—
VDDQ + 0.3
V
4
VIX (DC)
0.5
×
VDDQ
0.2V
0.5
×
VDDQ
0.5
×
VDDQ + 0.2V V
VID (DC)
0.36
—
VDDQ + 0.6
V
5, 6
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相關(guān)代理商/技術(shù)參數(shù) |
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| EBD21RD4ADNA-7B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
| EBD21RD4ADNA-7B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
| EBD21RD4ADNA-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
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