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參數(shù)資料
| 型號： | EBD11ED8ABFB |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks) |
| 中文描述： | 1GB的無緩沖DDR SDRAM的內(nèi)存EBD11ED8ABFB（128M的關(guān)鍵詞】72位，2組） |
| 文件頁數(shù)： | 5/19頁 |
| 文件大?。?/td> | 209K |
| 代理商： | EBD11ED8ABFB |
EBD11ED8ABFB
Preliminary Data Sheet E0295E20 (Ver. 2.0)
5
Serial PD Matrix
Byte No.
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Comments
0
Number of bytes utilized by module
manufacturer
Total number of bytes in serial PD
device
1
0
0
0
0
0
0
0
80H
128 bytes
1
0
0
0
0
1
0
0
0
08H
256 bytes
2
Memory type
0
0
0
0
0
1
1
1
07H
DDR SDRAM
3
Number of row address
0
0
0
0
1
1
0
1
0DH
13
4
Number of column address
0
0
0
0
1
0
1
1
0BH
11
5
Number of DIMM banks
0
0
0
0
0
0
1
0
02H
2
6
Module data width
0
1
0
0
1
0
0
0
48H
72 bits
7
Module data width continuation
0
0
0
0
0
0
0
0
00H
0
8
Voltage interface level of this assembly 0
0
0
0
0
1
0
0
04H
SSTL2
9
DDR SDRAM cycle time, CL = 2.5
-6B
0
1
1
0
0
0
0
0
60H
6.0ns*
1
-7A, -7B
0
1
1
1
0
1
0
1
75H
7.5ns*
1
10
SDRAM access from clock (tAC)
-6B
0
1
1
1
0
0
0
0
70H
0.7ns*
1
-7A, -7B
0
1
1
1
0
1
0
1
75H
0.75ns*
1
11
DIMM configuration type
0
0
0
0
0
0
1
0
02H
ECC
12
Refresh rate/type
1
0
0
0
0
0
1
0
82H
7.6
μ
s
13
Primary SDRAM width
0
0
0
0
1
0
0
0
08H
×
8
14
Error checking SDRAM width
0
0
0
0
1
0
0
0
08H
×
8
15
SDRAM device attributes:
Minimum clock delay back-to-back
column access
SDRAM device attributes:
Burst length supported
SDRAM device attributes: Number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
SDRAM device attributes:
/CS latency
SDRAM device attributes:
/WE latency
0
0
0
0
0
0
0
1
01H
1 CLK
16
0
0
0
0
1
1
1
0
0EH
2,4,8
17
0
0
0
0
0
1
0
0
04H
4
18
0
0
0
0
1
1
0
0
0CH
2, 2.5
19
0
0
0
0
0
0
0
1
01H
0
20
0
0
0
0
0
0
1
0
02H
1
21
SDRAM module attributes
0
0
1
0
0
0
0
0
20H
Differential
Clock
22
SDRAM device attributes: General
1
1
0
0
0
0
0
0
C0H
VDD ± 0.2V
23
Minimum clock cycle time at CL = 2
-6B, -7A
0
1
1
1
0
1
0
1
75H
7.5ns*
1
-7B
1
0
1
0
0
0
0
0
A0H
10ns*
1
24
Maximum data access time (tAC) from
clock at CL = 2
-6B
0
1
1
1
0
0
0
0
70H
0.7ns*
1
-7A, -7B
0
1
1
1
0
1
0
1
75H
0.75ns*
1
25 to 26
0
0
0
0
0
0
0
0
00H
27
Minimum row precharge time (tRP)
-6B
-7A, -7B
0
1
0
0
1
0
0
0
48H
18ns
0
1
0
1
0
0
0
0
50H
20ns
相關(guān)PDF資料 |
PDF描述 |
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| EBD11ED8ADFB | 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-5 | 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-5B | Connector |
| EBD11ED8ADFB-5C | 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-6B | 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBD11ED8ABFB-6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks) |
| EBD11ED8ABFB-7A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks) |
| EBD11ED8ABFB-7B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks) |
| EBD11ED8ADFB | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-5 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
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