- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384272 > EBD11ED8ABFB (Elpida Memory, Inc.) 1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks) PDF資料下載
參數(shù)資料
| 型號(hào)： | EBD11ED8ABFB |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks) |
| 中文描述： | 1GB的無緩沖DDR SDRAM的內(nèi)存EBD11ED8ABFB（128M的關(guān)鍵詞】72位，2組） |
| 文件頁數(shù)： | 10/19頁 |
| 文件大小： | 209K |
| 代理商： | EBD11ED8ABFB |
EBD11ED8ABFB
Preliminary Data Sheet E0295E20 (Ver. 2.0)
10
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, wait more than 200 μs and then, execute power on sequence and auto refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to +3.6
V
Supply voltage relative to VSS
VDD, VDDQ
–0.5 to +3.6
V
Short circuit output current
IO
50
mA
Power dissipation
PD
18
W
Operating temperature
TA
0 to +70
°C
1
Storage temperature
Tstg
–55 to +125
°C
Note: DDR SDRAM device specification.
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = 0 to +70°C) (DDR SDRAM Device Specification)
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Supply voltage
VDD,VDDQ
2.3
2.5
2.7
V
1
VSS
0
0
0
V
Input reference voltage
VREF
0.49
×
VDDQ
0.50
×
VDDQ 0.51
×
VDDQ
V
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
Input high voltage
VIH (DC)
VREF + 0.15
—
VDDQ + 0.3
V
2
Input low voltage
VIL (DC)
–0.3
—
VREF – 0.15
V
3
Input voltage level,
CK and /CK inputs
Input differential cross point
voltage, CK and /CK inputs
Input differential voltage,
CK and /CK inputs
Notes: 1. VDDQ must be lower than or equal to VDD.
2. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.
3. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
4. VIN (DC) specifies the allowable dc execution of each differential input.
5. VID (dc) specifies the input differential voltage required for switching.
6. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V
if measurement.
VIN (DC)
–0.3
—
VDDQ + 0.3
V
4
VIX (DC)
0.5
×
VDDQ
0.2V 0.5
×
VDDQ
0.5
×
VDDQ + 0.2V V
VID (DC)
0.36
—
VDDQ + 0.6
V
5, 6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EBD11ED8ADFB | 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-5 | 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-5B | Connector |
| EBD11ED8ADFB-5C | 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-6B | 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBD11ED8ABFB-6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks) |
| EBD11ED8ABFB-7A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks) |
| EBD11ED8ABFB-7B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks) |
| EBD11ED8ADFB | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-5 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。