Extremely Accurate I2C-Integrated RTC/TCXO/Crystal Maxim Integrated 3 DS3231 ELE" />
參數(shù)資料
型號(hào)： DS3231SN#T&R
廠商： Maxim Integrated Products
文件頁(yè)數(shù)： 14/20頁(yè)
文件大小： 0K
描述： IC RTC W/TCXO 16-SOIC
產(chǎn)品培訓(xùn)模塊： Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝： 1,000
類(lèi)型： 時(shí)鐘/日歷
特點(diǎn)： 警報(bào)器，閏年，方波輸出，TCXO/晶體
時(shí)間格式： HH:MM:SS（12/24 小時(shí)）
數(shù)據(jù)格式： YY-MM-DD-dd
接口： I²C，2 線串口
電源電壓： 2.3 V ~ 5.5 V
電壓 - 電源，電池： 2.3 V ~ 5.5 V
工作溫度： -40°C ~ 85°C
安裝類(lèi)型： 表面貼裝
封裝/外殼： 16-SOIC（0.295"，7.50mm 寬）
供應(yīng)商設(shè)備封裝： 16-SOIC W
包裝： 帶卷 (TR)
Extremely Accurate I2C-Integrated
RTC/TCXO/Crystal
Maxim Integrated
3
DS3231
ELECTRICAL CHARACTERISTICS (continued)
(VCC = 2.3V to 5.5V, VCC = Active Supply (see Table 1), TA = TMIN to TMAX, unless otherwise noted.) (Typical values are at VCC =
3.3V, VBAT = 3.0V, and TA = +25°C, unless otherwise noted.) (Notes 2, 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Output Frequency
fOUT
VCC = 3.3V or VBAT = 3.3V
32.768
kHz
0°C to +40°C
±2
Frequency Stability vs.
Temperature (Commercial)
f/fOUT
VCC = 3.3V or
VBAT = 3.3V,
aging offset = 00h
>40°C to +70°C
±3.5
ppm
-40°C to <0°C
±3.5
0°C to +40°C
±2
Frequency Stability vs.
Temperature (Industrial)
f/fOUT
VCC = 3.3V or
VBAT = 3.3V,
aging offset = 00h
>40°C to +85°C
±3.5
ppm
Frequency Stability vs. Voltage
f/V
1
ppm/V
-40°C
0.7
+25°C
0.1
+70°C
0.4
Trim Register Frequency
Sensitivity per LSB
f/LSB
Specified at:
+85°C
0.8
ppm
Temperature Accuracy
Temp
VCC = 3.3V or VBAT = 3.3V
-3
+3
°C
First year
±1.0
Crystal Aging
f/fO
After reflow,
not production tested
0–10 years
±5.0
ppm
ELECTRICAL CHARACTERISTICS
(VCC = 0V, VBAT = 2.3V to 5.5V, TA = TMIN to TMAX, unless otherwise noted.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
VBAT = 3.63V
70
Active Battery Current
IBATA
EOSC = 0, BBSQW = 0,
SCL = 400kHz (Note 5)
VBAT = 5.5V
150
μA
VBAT = 3.63V
0.84
3.0
Timekeeping Battery Current
IBATT
EOSC = 0, BBSQW = 0,
EN32kHz = 1,
SCL = SDA = 0V or
SCL = SDA = VBAT (Note 5) VBAT = 5.5V
1.0
3.5
μA
VBAT = 3.63V
575
Temperature Conversion Current
IBATTC
EOSC = 0, BBSQW = 0,
SCL = SDA = 0V or
SCL = SDA = VBAT
VBAT = 5.5V
650
μA
Data-Retention Current
IBATTDR
EOSC = 1, SCL = SDA = 0V, +25°C
100
nA
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