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參數(shù)資料
| 型號(hào)： | DS1254WB-150 |
| 廠商： | Maxim Integrated Products |
| 文件頁(yè)數(shù)： | 5/17頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC NVSRAM 16MBIT 150NS 168BGA |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 類(lèi)型： | Phantom 計(jì)時(shí)芯片 |
| 特點(diǎn)： | 閏年，NVSRAM |
| 存儲(chǔ)容量： | 2MB |
| 時(shí)間格式： | HH:MM:SS:hh（12/24 小時(shí)） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | 并聯(lián) |
| 電源電壓： | 3 V ~ 3.7 V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類(lèi)型： | 表面貼裝 |
| 封裝/外殼： | 168-BGA |
| 供應(yīng)商設(shè)備封裝： | 168-BGA（40x40） |
| 包裝： | 托盤(pán) |
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DS1254
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NOTES:
1) Voltage referenced to ground.
2) These parameters are sampled with a 50pF load and are not 100% tested.
3)
BW is an open-drain output and, as such, cannot source current. An external pullup resistor should be
connected to this pin for proper operation.
BW can sink 10mA.
4) The DS3800 battery cap is a one-time use part, but can be removed and replaced. By design, DS3800 removal
will mechanically damage the battery cap, which eliminates the accidental use of a previously attached and
possibly low-capacity battery cap.
5) tWP specified as the logical AND of CE and WE, tWP is measured from the latter of CE or WE going low to the
earlier of
CE or WE going high.
6) tAH1, tDH1 are measured from WE going high.
7) tAH2, tDH2 are measured from CE going high.
8) tDS is measured from the earlier of CE or WE going high.
9)
WE is high for a read cycle.
10)
OE = V
IH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance state.
11) If the
CE low transition occurs simultaneously with or later than the WE low transition in a write-enable-
controlled write cycle, the output buffers remain in a high-impedance state during this period.
12) If the
CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain
in a high-impedance state during this period.
13) If
WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output
buffers remain in a high-impedance state during this period.
14) In a power-down condition, the voltage on any pin cannot exceed the voltage on VCC.
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| DS1254WB2-150 | 功能描述:實(shí)時(shí)時(shí)鐘 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線(xiàn)接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1254WB-C01 | 功能描述:實(shí)時(shí)時(shí)鐘 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線(xiàn)接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1254WB-C02 | 功能描述:實(shí)時(shí)時(shí)鐘 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線(xiàn)接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1254YB-100 | 功能描述:IC NVSRAM 16MBIT 100NS 168BGA RoHS:否 類(lèi)別:集成電路 (IC) >> 時(shí)鐘/計(jì)時(shí) - 實(shí)時(shí)時(shí)鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- 類(lèi)型:時(shí)鐘/日歷 特點(diǎn):警報(bào)器，閏年，SRAM 存儲(chǔ)容量:- 時(shí)間格式:HH:MM:SS（12/24 小時(shí)） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類(lèi)型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤(pán) 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
| DS1254YB2-100 | 功能描述:實(shí)時(shí)時(shí)鐘 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線(xiàn)接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
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