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| 型號： | DS1254WB-150 |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 11/17頁 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 16MBIT 150NS 168BGA |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 類型： | Phantom 計時芯片 |
| 特點： | 閏年，NVSRAM |
| 存儲容量： | 2MB |
| 時間格式： | HH:MM:SS:hh（12/24 小時） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | 并聯(lián) |
| 電源電壓： | 3 V ~ 3.7 V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 168-BGA |
| 供應(yīng)商設(shè)備封裝： | 168-BGA（40x40） |
| 包裝： | 托盤 |
DS1254
3 of 17
RAM READ MODE
The DS1254 executes a read cycle whenever
WE is inactive (high) and CE is active (low). The unique address
specified by the 21 address inputs (A0–A20) defines which of the 2MB of data is to be accessed. Valid data will be
available to the eight data-output drivers within t
ACC (access time) after the last address input is stable, providing
that
CE and OE access times and states are also satisfied. If OE and CE access times are not satisfied, then data
access must be measured from the later occurring signal (
CE or OE) and the limiting parameter is either t
CO for CE
or tOE for OE rather than address access.
RAM WRITE MODE
The DS1254 is in the write mode whenever
WE and CE are in their active (low) state after address inputs are
stable. The later occurring falling edge of
CE or WE will determine the start of the write cycle. The write cycle is
terminated by the earlier rising edge of
CE or WE. All address inputs must be kept valid throughout the write cycle.
WE must return to the high state for a minimum recovery time (t
WR) before another cycle can be initiated. The OE
control signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus
has been enabled (
CE and OE active), then WE will disable the outputs in t
ODW from its falling edge.
DATA RETENTION MODE
The device is fully accessible and data can be written and read only when VCC is greater than VPF. However, when
V
CC falls below the power-fail point, VPF (point at which write protection occurs), the internal clock registers and
SRAM are blocked from any access. When V
CC falls below VBAT, device power is switched from the VCC to VBAT.
RTC operation and SRAM data are maintained from the battery until V
CC is returned to nominal levels. All signals
must be powered down when VCC is powered down.
PHANTOM CLOCK OPERATION
Communication with the phantom clock is established by pattern recognition on a serial bit stream of 64 bits that
must be matched by executing 64 consecutive write cycles containing the proper data on DQ0. All accesses that
occur prior to recognition of the 64-bit pattern are directed to memory.
After recognition is established, the next 64 read or write cycles either extract or update data in the phantom clock,
and memory access is inhibited.
Data transfer to and from the timekeeping function is accomplished with a serial bit stream under control of chip
enable (
CE), output enable (OE), and write enable (WE). Initially, a read cycle to any memory location using the CE
and
OE control of the phantom clock starts the pattern-recognition sequence by moving a pointer to the first bit of
the 64-bit comparison register. Next, 64 consecutive write cycles are executed using the
CE and WE signals of the
device. These 64 write cycles are used only to gain access to the phantom clock. Therefore, any address within the
first 512kB of memory, (00h to 7FFFFh) is acceptable. However, the write cycles generated to gain access to the
phantom clock are also writing data to a location in the memory. The preferred way to manage this requirement is
to set aside just one address location in memory as a phantom clock scratch pad. When the first write cycle is
executed, it is compared to bit 0 of the 64-bit comparison register. If a match is found, the pointer increments to the
next location of the comparison register and awaits the next write cycle. If a match is not found, the pointer does
not advance and all subsequent write cycles are ignored. If a read cycle occurs at any time during pattern
recognition, the present sequence is aborted and the comparison register pointer is reset. Pattern recognition
continues for a total of 64 write cycles as described above until all the bits in the comparison register have been
matched (this bit pattern is shown in Figure 2). With a correct match for 64-bits, the phantom clock is enabled and
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| DS1254WB2-150 | 功能描述:實時時鐘 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1254WB-C01 | 功能描述:實時時鐘 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1254WB-C02 | 功能描述:實時時鐘 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1254YB-100 | 功能描述:IC NVSRAM 16MBIT 100NS 168BGA RoHS:否 類別:集成電路 (IC) >> 時鐘/計時 - 實時時鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- 類型:時鐘/日歷 特點:警報器，閏年，SRAM 存儲容量:- 時間格式:HH:MM:SS（12/24 小時） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
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