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參數(shù)資料
| 型號： | DS1230ABP-100 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 |
| 封裝： | POWERCAP MODULE-34 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 213K |
| 代理商： | DS1230ABP-100 |
1 of 12
111899
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Replaces 32k x 8 volatile static RAM,
EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full
±10% V
CC operating range (DS1230Y)
Optional
±5% V
CC operating range
(DS1230AB)
Optional industrial temperature range of
-40
°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
-
Directly surface-mountable module
-
Replaceable snap-on PowerCap provides
lithium backup battery
-
Standardized pinout for all nonvolatile
SRAM products
-
Detachment feature on PowerCap allows
easy removal using a regular screwdriver
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A14
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
VCC
- Power (+5V)
GND
- Ground
NC
- No Connect
DS1230Y/AB
256k Nonvolatile SRAM
www.dalsemi.com
13
1
2
3
4
5
6
7
8
9
10
11
12
14
27
28-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
A14
A7
A5
A4
A3
A2
A1
A0
DQ1
DQ0
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ5
DQ6
28
26
25
24
23
22
21
20
19
18
17
15
16
A12
A6
DQ2
GND
DQ4
DQ3
1
NC
2
3
NC
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
4
5
6
7
8
9
10
11
12
13
14
15
16
17
NC
A14
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
34
NC
GND
VBAT
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
相關PDF資料 |
PDF描述 |
|---|---|
| DS1230AB-85 | 32K X 8 NON-VOLATILE SRAM MODULE, 85 ns, PDIP28 |
| DS1230AB-70 | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP28 |
| DS1230YP-100 | 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 |
| DS1230Y-150 | 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP28 |
| DS1230W-150 | 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DIP28 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS1230ABP-100+ | 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1230AB-P100IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230ABP-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230AB-P120 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230ABP-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
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