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參數(shù)資料
| 型號： | DS1225Y-200 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 125K |
| 代理商： | DS1225Y-200 |
210
6
ON-RESISTANCE vs. VCOM
AND SINGLE-SUPPLY VOLTAGE
MAX381/3/5-03
VCOM (V)
R
ON
(
)
14
04
12
816
10
70
60
50
40
110
120
100
90
80
30
20
0
V+ = 2.5V
V+ = 3V
V+ = 5V
V- = 0V
V+ = 9V
V+ = 12V
V+ = 15V
MAX381/MAX383/MAX385
Precision, Low-Voltage Analog Switches
6
_______________________________________________________________________________________
-6
2
-2
ON-RESISTANCE vs. VCOM
AND DUAL-SUPPLY VOLTAGES
MAX381/3/5-01
VCOM (V)
R
ON
(
)
6
-8
-4
4
08
5
35
30
25
20
15
10
0
V+ = 3V, V- = -3V
V+ = 5V, V- = -5V
V+ = 8V, V- = -8V
__________________________________________Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
-5
-3
1
-1
5
ON-RESISTANCE vs. VCOM AND
TEMPERATURE (DUAL SUPPLIES)
MAX381/3/5-02
VCOM (V)
R
ON
(
)
3
-4
-2
2
04
5
35
30
25
20
15
10
0
TA = +125°C
V+ = 5V
V- = -5V
TA = +85°C
TA = +25°C
TA = -55°C
PARAMETER
SYMBOL
MIN
TYP
MAX
(Note 2)
UNITS
CONDITIONS
Input Current with Input
Voltage Low
IINL
A
Negative Supply Current
I-
-1.0
-0.01
1.0
A
Positive Supply Current
I+
-1.0
0.01
1.0
A
All channels on or off, VIN = 0V or V+,
V+ = 3.6V, V- = 0V
All channels on or off, VIN = 0V or V+,
V+ = 3.6V, V- = 0V
VIN = 0.8V, all others = 2.4V
-1.0
0.005
1.0
ELECTRICAL CHARACTERISTICS—Single +3.3V Supply (continued)
(V+ = 3.0V to 3.6V, GND = 0V, VINH = 2.4V, VINL = 0.8V, TA = TMIN to TMAX, unless otherwise noted.)
Power-Supply Range
V+
2.7
16
V
Input Current with Input
Voltage High
IINH
A
VIN = 2.4V, all others = 0.8V
-1.0
0.005
1.0
Turn-On Time (Note 3)
tON
400
ns
VCOM = 1.5V, Figure 2
Turn-Off Time (Note 3)
tOFF
150
ns
VCOM = 1.5V, Figure 2
TA = +25°C
Break-Before-Make Time
Delay (Note 3)
Charge Injection (Note 3)
VCTE
15
pC
CL = 1.0nF,
VGEN = 0V, RGEN = 0
tD
10
20
ns
MAX383 only
DIGITAL LOGIC INPUT
DYNAMIC
SUPPLY
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1225Y-200+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225Y-200IND | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225Y-200-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:64K Nonvolatile SRAM |
| DS1225Y-200IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1227 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:KickStarter Chip |
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