參數(shù)資料
型號: DS1220Y-100
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: Static RAM
英文描述: 2K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA24
封裝: 0.720 INCH,DIP-24
文件頁數(shù): 6/9頁
文件大?。?/td> 390K
代理商: DS1220Y-100
NOT RECOMMENDED FOR NEW DESIGNS
DS1220Y
6 of 9
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
CE
at VIH before Power-Down
tPD
0
μs
11
VCC Slew from VTP to 0V
tF
100
μs
VCC Slew from 0V to VTP
tR
0
μs
CE
at VIH after Power-Up
tREC
2
ms
(TA = +25°C)
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
Expected Data Retention Time
tDR
10
years
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1. WE is high for a read cycle.
2. OE = VIH or VIL. If OE = VIH during a write cycle, the output buffers remain in a high impedance
state.
3. tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4. tDS are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
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