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參數(shù)資料
| 型號(hào)： | DS1220Y-100 |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA24 |
| 封裝： | 0.720 INCH,DIP-24 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 390K |
| 代理商： | DS1220Y-100 |
1 of 9
REV: 072808
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 2k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times as fast as 100 ns
Full ±10% operating range
Optional industrial temperature range of
-40°C to +85°C, designated IND
PIN ASSIGNMENT
24-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A10
- Address Inputs
DQ0-DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
VCC
- Power (+5V)
GND
- Ground
DESCRIPTION
The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048
words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that
constantly monitor VCC for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to
the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or
the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
14
VCC
WE
1
2
3
4
5
6
7
8
9
10
11
12
13
24
15
23
22
21
20
19
18
17
16
A7
A5
A3
A2
A1
A0
DQ0
DQ1
GND
DQ2
A6
A4
A8
A9
OE
A10
CE
DQ7
DQ6
DQ5
DQ3
DQ4
DS1220Y
16k Nonvolatile SRAM
NOT RECOMMENDED FOR NEW DESIGNS
www.maxim-ic.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1220Y-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1220Y-150 | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 |
| DS1220Y | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1222S | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO16 |
| DS1222 | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP14 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220Y-100+ | 制造商:Maxim Integrated Products 功能描述:NVRAM NVSRAM PARALLEL 16KBIT 5V - Rail/Tube |
| DS1220Y-100-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1220Y-100IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220Y-120 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220Y-120+ | 制造商:Maxim Integrated Products 功能描述:RAM NV 16K-120NS LEAD FREE - Rail/Tube |
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